component
CMB50N20
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| cmb50n20-etched.glb | 4d ago |
| cmb50n20-etched.step | 4d ago |
| cmb50n20-hero.glb | 4d ago |
| cmb50n20-hero.overlay.json | 4d ago |
| cmb50n20.glb | 4d ago |
| cmb50n20.kicad_mod | 4d ago |
| cmb50n20.kicad_sym | 4d ago |
| cmb50n20.lbr | 4d ago |
| cmb50n20.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
CMB50N20
Cmos(广东场效应半导体) · IC · TO-263
CMB50N20 from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS maximum ±20 V, gate threshold 2 to 4 V at VGS=VDS, ID=250uA. |
| 2 | D | passive | Drain (also the tab); VDS maximum 200 V, continuous current 50 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current 50 A, pulsed 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-263 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 55 | mΩ | VGS=10V, ID=25A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 50 | A | 2 | |||
| Pulsed Source Current | ISM | 200 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IF=25A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 50 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 40 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1350 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 350 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/W | 1 | |||
| Thermal Resistance Junction-case | RθJC | 0.4 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMB50N20 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmb50n20-etched.step/cmb50n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmb50n20.step/cmb50n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256
bd9c5241baae618f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).