component
CMB50N06N
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| cmb50n06n-etched.glb | 3d ago |
| cmb50n06n-etched.step | 3d ago |
| cmb50n06n-hero.glb | 3d ago |
| cmb50n06n-hero.overlay.json | 3d ago |
| cmb50n06n.glb | 3d ago |
| cmb50n06n.kicad_mod | 3d ago |
| cmb50n06n.kicad_sym | 3d ago |
| cmb50n06n.lbr | 3d ago |
| cmb50n06n.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
CMB50N06N
Cmos(广东场效应半导体) · IC · TO-263
CMB50N06N from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for a gate-source voltage of ±20 V (VGS), per the Absolute Maximum Ratings. |
| 2 | D | passive | Drain of the MOSFET, rated for 60 V drain-source voltage (VDS) and 50 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source of the MOSFET, rated for 50 A continuous source current (IS) per the Diode Characteristics table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-263 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS , ID =250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=60V , VGS=0V , TJ=100℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14 | mΩ | VGS=10V , ID=25A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 13 | 16 | mΩ | VGS=4.5V , ID=20A | 2 | |
| Continuous Source Current | IS | 50 | A | 2 | |||
| Pulsed Source Current | ISM | 200 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.84 | 1.25 | V | VGS=0V , IS=20A ,TJ=25℃ | 2 | |
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 50 | A | 1 | |||
| Continuous Drain Current | ID@TC=100℃ | 35 | A | 1 | |||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 162 | mJ | Note 1: VDD=30V , VGS=10V , L=1mH , IAS=18A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 145 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.86 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMB50N06N - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmb50n06n-etched.step/cmb50n06n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmb50n06n.step/cmb50n06n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
cd4b62bc1e5bf790, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).