component
CMB32N20P
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| cmb32n20p-etched.glb | 13d ago |
| cmb32n20p-etched.step | 13d ago |
| cmb32n20p-hero.glb | 13d ago |
| cmb32n20p-hero.overlay.json | 13d ago |
| cmb32n20p.glb | 13d ago |
| cmb32n20p.kicad_mod | 13d ago |
| cmb32n20p.kicad_sym | 13d ago |
| cmb32n20p.lbr | 13d ago |
| cmb32n20p.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
CMB32N20P
Cmos(广东场效应半导体) · MOSFETs · TO-263
CMB32N20P from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 200 V and a continuous drain current of 32 A at TC=25℃ (limited by maximum junction temperature). |
| 3 | S | passive | Source terminal, with body-diode continuous source current rated at 32 A and pulsed source current at 128 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=160V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 32 | A | 2 | |||
| Pulsed Source Current | ISM | 128 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=32 A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | Printed as ±20 V | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 32 | A | Drain current limited by maximum junction temperature | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 22 | A | Drain current limited by maximum junction temperature | 1 | ||
| Pulsed Drain Current | IDM | 128 | A | Repetitive rating; pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1000 | mJ | VDD=80V, VGS=10V, L=5.0mH, IAS=20A (note 2) | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 160 | W | TC=25℃ (220/263/262 column) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance Junction-case | RθJC | 0.78 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMB32N20P - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmb32n20p-etched.step/cmb32n20p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmb32n20p.step/cmb32n20p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
01ab40b3499d0a78, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).