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CMB3205B

Public Made by Adom

by adom

Cmos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMB3205B

Cmos · MOSFETs · TO-263

CMB3205B from Cmos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated at ±20 V maximum and a threshold of 2 V to 4 V at ID=250uA.
2 D passive Drain; rated for VDS of 65 V and 130 A continuous drain current at TC=25℃ (520 A pulsed).
3 S passive Source; carries up to 130 A continuous source/drain current at TC=25℃.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 65 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 5.8 mΩ VGS=10V, ID=30A 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 130 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 520 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=45A, TJ=25℃ 2
Drain-Source Voltage VDS 65 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 130 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 100 A TC=100℃ 1
Pulsed Drain Current IDM 520 A 1
Single Pulse Avalanche Energy EAS 1000 mJ 1
Total Power Dissipation PD@TC=25℃ 260 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-case RθJC 0.75 ℃/W 1
Forward Transconductance gfs 20 S VDS=10V, ID=10A 2
Gate Resistance Rg 2.2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 125 nC 2
Gate-Source Charge Qgs 25 nC 2
Gate-Drain Charge Qgd 50 nC 2
Turn-On Delay Time Td(on) 21 ns 2
Rise Time Tr 20 ns 2
Turn-Off Delay Time Td(off) 70 ns 2
Fall Time Tf 31 ns 2
Input Capacitance Ciss 5850 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 410 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 315 pF VDS=25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMB3205B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: cmb3205b-etched.step / cmb3205b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmb3205b.step / cmb3205b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (4 pp, sha256 2fe216ca61728092, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF