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cmb18n20a-etched.step cmb18n20a: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 21d ago
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cmb18n20a-hero.overlay.json cmb18n20a: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 21d ago
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README.md cmb18n20a: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 21d ago

CMB18N20A

Cmos · MOSFETs · TO-263

CMB18N20A from Cmos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the pin-configuration picture labels the left lead G, with gate-source voltage limited to ±30 V absolute maximum.
2 D passive Drain; the picture labels the drain on the tab, and the middle lead is drawn between G and S. Drain-source voltage is 200 V maximum and continuous drain current is 18 A at Tc=25℃.
3 S passive Source; the picture labels the right lead S, and the body diode is rated 18 A continuous source current.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V , ID=250uA 2
Gate Threshold Voltage VGS(th) 1 1.95 3 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=200V , VGS =0V 2
Drain-Source Leakage Current IDSS 100 uA VDS=160V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS ±30V , VDS=0V 2
Continuous Source Current IS 18 A 2
Pulsed Source Current ISM 54 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1 A, TJ=25℃ 2
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 18 A Tc=25℃ 1
Continuous Drain Current ID 11 A Tc=100℃ 1
Pulsed Drain Current IDM 54 A Note 1: Repetitive rating; pulse width limited by maximum junction temperature 1
Single Pulse Avalanche Energy EAS 180 mJ Note 2: VDD=50V, VGS=10V, L=10 mH, IAS=6A 1
Total Power Dissipation PD 100 W Tc=25℃ 1
Storage Temperature Range TSTG -55 150 1
Operating Junction Temperature Range TJ -55 150 1
Thermal Resistance Junction-case RθJC 1.2 ℃/W 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: CMB18N20A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: cmb18n20a-etched.step / cmb18n20a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmb18n20a.step / cmb18n20a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (3 pp, sha256 fc1d2c4176b43768, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF