# CMB1405

**Cmos(广东场效应半导体)** · MOSFETs · TO-263

CMB1405 from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the CMB1405 N-channel MOSFET; gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain of the CMB1405; drain-source voltage is rated 55 V with continuous drain current of 140 A at TC=25℃. |
| 3 | S | passive | Source of the CMB1405; continuous source current is rated 140 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 55 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 140 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID |  |  | 99 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 560 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 1012 | mJ | VDD=30V, VGS=10V, L=1mH, IAS=45A (note 1) | 1 |
| Power Dissipation | PD |  |  | 200 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 60 | ℃/W |  | 1 |
| Thermal Resistance Junction-case | RθJC |  |  | 0.75 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 55 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.5 | 5.5 | mΩ | VGS=10V, ID=40A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 6.8 | mΩ | VGS=6V, ID=30A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=10V, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 100 | uA | VDS=48V, VGS=0V @125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 140 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | 560 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `CMB1405`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `cmb1405-etched.step` / `cmb1405-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmb1405.step` / `cmb1405.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600644277512908800) (4 pp, sha256 `1c3c07049be44e8c`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmb1405-datasheet.pdf)