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CMB110N08B

Public Made by Adom

by adom

Cmos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMB110N08B

Cmos · MOSFETs · TO-263

CMB110N08B from Cmos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a maximum gate-source voltage of ±20 V and a gate threshold voltage of 2 V to 4 V at VDS=VGS, ID=250 µA.
2 D passive Drain, rated for 80 V drain-source voltage and 110 A continuous drain current at TC=25℃ (440 A pulsed).
3 S passive Source, with a continuous source (body-diode) current rating of 110 A and 440 A pulsed.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 110 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 75 A TC=100℃ 1
Pulsed Drain Current IDM 440 A Repetitive rating; pulse width limited by max. junction temperature 1
Single Pulse Avalanche Energy EAS 612 mJ VDD=40V, starting TJ=25℃, L=1mH, ID=35A, VG=10V 1
Total Power Dissipation PD@TC=25℃ 250 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-case RθJC 0.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.8 6.5 mΩ VGS=10V, ID=40A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=64V, VGS=0V 2
Drain-Source Leakage Current IDSS 5 uA VDS=64V, VGS=0V, TJ =55 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Forward Transconductance gfs 30 S VDS=10V, ID=25A 2
Gate Resistance Rg 2.5 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 60 nC 2
Gate-Source Charge Qgs 17 nC 2
Gate-Drain Charge Qgd 12 nC 2
Turn-On Delay Time Td(on) 20 ns 2
Rise Time Tr 35 ns 2
Turn-Off Delay Time Td(off) 25 ns 2
Fall Time Tf 15 ns 2
Input Capacitance Ciss 9800 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 500 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 480 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 60 ns IF=50A, dI/dt=100A/μs 2
Reverse Recovery Charge Qrr 150 nC IF=50A, dI/dt=100A/μs 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=80A 2
Continuous Source Current IS 110 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 440 A VG=VD=0V, Force Current 2

CAD (KiCad official)

  • Symbol: CMB110N08B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: cmb110n08b-etched.step / cmb110n08b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmb110n08b.step / cmb110n08b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 bdcbcc2e0db3b406, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF