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CMB100N04S

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Cmos(广东场效应半导体) , TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMB100N04S

Cmos(广东场效应半导体) · IC · TO-263

CMB100N04S from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, rated for VGS ±20 V (Gate-Source Voltage, absolute maximum rating).
2 D passive Drain of the MOSFET, rated for VDS 40 V with continuous drain current ID of 80 A at TC=25℃ (50 A at TC=100℃).
3 S passive Source of the MOSFET, with continuous source current IS rated at 80 A and pulsed source current ISM at 320 A.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-263
Category
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 50 A TC=100℃ 1
Pulsed Drain Current IDM 320 A 1
Single Pulse Avalanche Energy EAS 230 mJ 1
Total Power Dissipation PD@TC=25℃ 115 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-case RθJC 1.3 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 5.8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 12 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=40V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 80 A 2
Pulsed Source Current ISM 320 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.3 V VGS=0V, IS=15 A, TJ=25℃ 2
Forward Transconductance gfs 14 S VDS=10V, ID=20A 2
Total Gate Charge Qg 60 nC 2
Gate-Source Charge Qgs 15 nC 2
Gate-Drain Charge Qgd 16 nC 2
Turn-On Delay Time Td(on) 35 ns 2
Rise Time Tr 80 ns 2
Turn-Off Delay Time Td(off) 85 ns 2
Fall Time Tf 30 ns 2
Input Capacitance Ciss 2900 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 200 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 150 pF VDS=25V, VGS=0V, f=1MHz 2
Gate Resistance Rg 2 Ω VDS=0V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMB100N04S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: cmb100n04s-etched.step / cmb100n04s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmb100n04s.step / cmb100n04s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256 438c6e8580ba8338, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF