component
CMB044N10B
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| cmb044n10b-etched.glb | 4d ago |
| cmb044n10b-etched.step | 4d ago |
| cmb044n10b-hero.glb | 4d ago |
| cmb044n10b-hero.overlay.json | 4d ago |
| cmb044n10b.glb | 4d ago |
| cmb044n10b.kicad_mod | 4d ago |
| cmb044n10b.kicad_sym | 4d ago |
| cmb044n10b.lbr | 4d ago |
| cmb044n10b.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
CMB044N10B
Cmos(广东场效应半导体) · IC · TO-263
CMB044N10B from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 2 to 4 V at VGS=VDS, ID=250uA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage 100 V max, continuous current 120 A (package limit), pulsed 480 A. |
| 3 | S | passive | Source; body diode continuous source current 120 A, pulsed 480 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-263 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.2 | mΩ | VGS=10V , ID=50A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 120 | A | 2 | |||
| Pulsed Source Current | ISM | 480 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V , IS=40A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (Package limit) | ID@TC=25℃ | 120 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (Silicon limit) | ID@TC=100℃ | 108 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1458 | mJ | VDD=50V, VGS=10V, L=1mH, IAS=54A (Note 1) | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 227 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/ W | 1 | |||
| Thermal Resistance Junction-case | RθJC | 0.55 | ℃/ W | 1 |
CAD (KiCad official)
- Symbol:
CMB044N10B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmb044n10b-etched.step/cmb044n10b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmb044n10b.step/cmb044n10b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
d0baa9a6b55cd786, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).