component
CMB020N06
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMB020N06
Cmos(广东场效应半导体) · MOSFETs · TO-263
CMB020N06 from Cmos(广东场效应半导体), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V with threshold of 1.0 to 3.0 V at ID=250µA. |
| 2 | D | passive | Drain, connected to the tab; drain-source voltage rated 60 V and continuous drain current 140 A at TC=25°C. |
| 3 | S | passive | Source; connects to the source side of the N-channel MOSFET and its body diode, which carries up to 140 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 140 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 560 | A | 1 | |||
| Total Power Dissipation | PD | 214 | W | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 841 | mJ | VDS=30V, VGS=10V, L=0.5mH, IAS=58A (note 1) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | ℃/W | 6cm2 cooling area | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 0.58 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.9 | 2.2 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.6 | 3 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS ±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=10A, Tj=25℃ | 2 | |
| Diode continuous forward current | IS | 140 | A | 2 | |||
| Pulsed Source Current | ISM | 560 | A | VG=VD=0V, Force Current | 2 |
CAD (KiCad official)
- Symbol:
CMB020N06 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmb020n06-etched.step/cmb020n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmb020n06.step/cmb020n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
5f1434c844fc61ec, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).