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CM100D-BBD

Public Made by Adom

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iCM(创芯微) , DFN-6L(1.6x1.9). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CM100D-BBD

iCM(创芯微) · IC · DFN-6L(1.6x1.9)

CM100D-BBD from iCM(创芯微), in a DFN-6L(1.6x1.9). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VM input External negative voltage input terminal used for charger detection and overcurrent sensing, with an input voltage limit of VDD-28 V to VDD+0.3 V.
2 CO output Charge MOSFET control terminal, with an output voltage limit of VM-0.3 V to VDD+0.3 V.
3 DO output Discharge MOSFET control terminal, with an output voltage limit of VSS-0.3 V to VDD+0.3 V.
4 VSS power_in Power ground, connected to the negative terminal of the battery; the VDD-to-VSS input voltage is limited to VSS-0.3 V to VSS+8.0 V.
5 VDD power_in Power supply input, connected to the positive terminal of the battery; operating VDD-VSS is 1.5 V to 8.0 V.
6 VINI input Overcurrent detection terminal, with an input voltage limit of VDD-8.0 V to VDD+0.3 V.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer iCM(创芯微)
Package DFN-6L(1.6x1.9)
Category
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
正常工作电流 (Normal operating current) IOPE 0.9 1.8 3.5 μA VDD=3.5V, VVM=0V 6
过放电流 (Overdischarge current) IOPED 0.5 0.8 μA VDD=VVM=1.5V 6
过充电保护电压 (Overcharge detection voltage) VOC 4.5 4.525 4.55 V VDD=3.5 → 4.8V 6
过充电解除电压 (Overcharge release voltage) VOCR 4.275 4.325 4.375 V 6
过放电保护电压 (Overdischarge detection voltage) VOD 2.42 2.5 2.58 V VDD=3.5 → 2.0V 6
过放电解除电压 (Overdischarge release voltage) VODR 2.8 2.9 3 V 6
放电过电流检测电压 (Discharge overcurrent detection voltage) VEC 0.007 0.01 0.013 V 6
负载短路检测电压 1 (Load short detection voltage 1) VSHORT1 0.03 0.04 0.05 V 6
负载短路检测电压 2 (Load short detection voltage 2), relative to VDD VSHORT2 -1.3 -1 -0.7 V Printed as VVDD − 1.3 / VVDD, 1.0 / VVDD − 0.7 V; limits are the offset from VDD 6
充电过流保护电压 (Charge overcurrent detection voltage) VCHA -0.018 -0.015 -0.012 V 6
放电过流解除电压 (Discharge overcurrent release voltage), relative to VDD VRIOV -1.3 -1 -0.7 V VDD=3.5V; printed as VVDD − 1.3 / VVDD, 1.0 / VVDD − 0.7 V; limits are the offset from VDD 6
过充电保护延时 (Overcharge detection delay) TOC 717 1024 1331 ms VDD=3.5 → 4.8V 6
过放电保护延时 (Overdischarge detection delay) TOD 44.8 64 83.2 ms VDD=3.5 → 2.0V 6
放电过流保护延时 (Discharge overcurrent detection delay) TEC 11.2 16 20.8 ms VINI-VSS=0→0.120V 6
充电过流保护延时 (Charge overcurrent detection delay) TCHA 11.2 16 20.8 ms VSS-VINI=0→0.120V 6
负载短路保护延时 (Load short detection delay) TSHORT 140 280 420 μs VINI-VSS=0→0.120V 6
过充电恢复延时 (Overcharge recovery delay) TOCR 0.7 1 1.3 ms VDD=4.8 → 3.5V 6
过放电恢复延时 (Overdischarge recovery delay) TODR 0.7 1 1.3 ms VDD=2.0 → 3.5V 6
放电过流恢复延时 (Discharge overcurrent recovery delay) TECR 5.6 8 10.4 ms VINI-VSS=0.120→0V 6
充电过流恢复延时 (Charge overcurrent recovery delay) TCHA 0.7 1 1.3 ms VSS-VINI=0.120→0V 6
VDD端子-VSS端子 输入电压 (Input voltage VDD to VSS) VVDD 1.5 8 V 6
VDD端子-VM端子 输入电压 (Input voltage VDD to VM) VVM 1.5 28 V 6
VDD端子-VM端子间电阻 (Internal resistance VDD to VM) RVMD 150 300 600 kΩ VDD=1.8V, VVM=0V 6
VM端子-VSS端子间电阻 (Internal resistance VM to VSS) RVMS 5 10 15 kΩ VDD=3.4V, VVM=1.0V 6
CO端子电阻 H (CO output resistance H) RCOH 5 10 20 kΩ 6
CO端子电阻 L (CO output resistance L) RCOL 5 10 20 kΩ 6
DO端子电阻 H (DO output resistance H) RDOH 5 10 20 kΩ 6
DO端子电阻 L (DO output resistance L) RDOL 1 2 4 kΩ 6
开始向0V电池充电的充电器电压 (Charger voltage to start charging a 0V battery) V0CHA 0.7 1.1 1.5 V Printed condition: 允许向0V电池充电 (0V battery charging allowed) 6
Input voltage between VDD and VSS (absolute maximum) VDD -0.3 8 V Referenced to VSS; printed VSS-0.3 ~ VSS+8.0 V 5
VINI input terminal voltage (absolute maximum) VVINI -8 0.3 V Referenced to VDD; printed VDD-8.0 ~ VDD+0.3 V 5
VM input terminal voltage (absolute maximum) VVM -28 0.3 V Referenced to VDD; printed VDD-28 ~ VDD+0.3 V 5
CO output terminal voltage (absolute maximum) VCO -0.3 0.3 V Min referenced to VM, max referenced to VDD; printed VVM -0.3 ~ VDD+0.3 V 5
DO output terminal voltage (absolute maximum) VDO -0.3 0.3 V Min referenced to VSS, max referenced to VDD; printed VSS-0.3 ~ VDD+0.3 V 5
工作温度范围 (Operating temperature range) TOPR -40 85 °C 5
储存温度范围 (Storage temperature range) TSTG -55 125 °C 5

CAD (KiCad official)

  • Symbol: CM100D-BBD
  • Footprint: Package_DFN_QFN:DFN-6-1EP_2x1.6mm_P0.5mm_EP1.15x1.3mm
  • 3D model: DFN-6L(1.6x1.9), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: cm100d-bbd-etched.step / cm100d-bbd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cm100d-bbd.step / cm100d-bbd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: iCM(创芯微) datasheet (19 pp, sha256 161fd4735785c28f, retrieved 2026-11-07, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF