component
CJX3439K
Public Made by Adomby adom
Changjing MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
cjx3439k: specified limits as data (metadata.characteristics, 44 rows from the datasheet)
2 files changed
+587−1
README.md+51@@ -24,6 +24,57 @@ CJX3439K from Changjing, in a SOT-563. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-MOSFET) | VDS | | | 20 | V | | 1 |+| Gate-Source Voltage (N-MOSFET) | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current (N-MOSFET, note 1) | ID | | | 0.75 | A | | 1 |+| Pulsed Drain Current (N-MOSFET, tp=10us) | IDM | | | 1.8 | A | tp=10us | 1 |+| Drain-Source Voltage (P-MOSFET) | VDS | -20 | | | V | | 1 |+| Gate-Source Voltage (P-MOSFET) | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current (P-MOSFET, note 1) | ID | -0.66 | | | A | | 1 |+| Pulsed Drain Current (P-MOSFET, tp=10us) | IDM | -1.2 | | | A | tp=10us | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | ℃ | 1/8 in from case for 10 s | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | 833 | | ℃/W | Surface mounted on FR4 board, minimum recommended pad size (note 1) | 1 |+| N-ch Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =250µA | 2 |+| N-ch Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =20V, VGS = 0V | 2 |+| N-ch Gate-body leakage current | IGSS | -20 | | 20 | uA | VGS =±10V, VDS = 0V | 2 |+| N-ch Gate threshold voltage | VGS(th) | 0.35 | | 1.1 | V | VDS =VGS, ID =250µA | 2 |+| N-ch Drain-source on-resistance | RDS(on) | | | 380 | mΩ | VGS =4.5V, ID =0.65A | 2 |+| N-ch Drain-source on-resistance | RDS(on) | | | 450 | mΩ | VGS =2.5V, ID =0.55A | 2 |+| N-ch Drain-source on-resistance | RDS(on) | | | 800 | mΩ | VGS =1.8V, ID =0.45A | 2 |+| N-ch Input Capacitance | Ciss | | 79 | 120 | pF | VDS =16V, VGS =0V, f =1MHz | 2 |+| N-ch Output Capacitance | Coss | | 13 | 20 | pF | VDS =16V, VGS =0V, f =1MHz | 2 |+| N-ch Reverse Transfer Capacitance | Crss | | 9 | 15 | pF | VDS =16V, VGS =0V, f =1MHz | 2 |+| N-ch Diode forward voltage | VSD | | | 1.2 | V | IS=0.15A, VGS = 0V | 2 |+| N-ch Forward transconductance | gFS | | 1.6 | | S | VDS =10V, ID =0.8A | 2 |+| N-ch Turn-on delay time | td(on) | | 6.7 | | ns | VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω | 2 |+| N-ch Turn-on rise time | tr | | 4.8 | | ns | VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω | 2 |+| N-ch Turn-off delay time | td(off) | | 17.3 | | ns | VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω | 2 |+| N-ch Turn-off fall time | tf | | 7.4 | | ns | VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω | 2 |+| P-ch Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID =-250µA | 2 |+| P-ch Zero gate voltage drain current | IDSS | | | -1 | µA | VDS =-20V, VGS = 0V | 2 |+| P-ch Gate-body leakage current | IGSS | -20 | | 20 | uA | VGS =±10V, VDS = 0V | 2 |+| P-ch Gate threshold voltage | VGS(th) | -0.35 | | -1.1 | V | VDS =VGS, ID =-250µA | 2 |+| P-ch Drain-source on-resistance | RDS(on) | | | 520 | mΩ | VGS =-4.5V, ID =-1A | 2 |+| P-ch Drain-source on-resistance | RDS(on) | | | 700 | mΩ | VGS =-2.5V, ID =-0.8A | 2 |+| P-ch Input Capacitance | Ciss | | 113 | 170 | pF | VDS =-16V, VGS =0V, f =1MHz | 2 |+| P-ch Output Capacitance | Coss | | 15 | 25 | pF | VDS =-16V, VGS =0V, f =1MHz | 2 |+| P-ch Reverse Transfer Capacitance | Crss | | 9 | 15 | pF | VDS =-16V, VGS =0V, f =1MHz | 2 |+| P-ch Diode forward voltage | VSD | | | -1.2 | V | IS=-0.5A, VGS = 0V | 2 |+| P-ch Drain-source on-resistance | RDS(on) | | 950 | | mΩ | VGS =-1.8V, ID =-0.5A | 2 |+| P-ch Forward transconductance | gFS | | 1.2 | | S | VDS =-10V, ID =-0.54A | 2 |+| P-ch Turn-on delay time | td(on) | | 9 | | ns | VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω | 2 |+| P-ch Turn-on rise time | tr | | 5.8 | | ns | VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω | 2 |+| P-ch Turn-off delay time | td(off) | | 32.7 | | ns | VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω | 2 |+| P-ch Turn-off fall time | tf | | 20.3 | | ns | VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω | 2 |+ ## CAD (KiCad official) - Symbol: `CJX3439K`
page.json+536−1@@ -165,6 +165,541 @@ "Package": "SOT-563", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4d1e144129e79a57",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-MOSFET)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-MOSFET)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-MOSFET, note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.75,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-MOSFET, tp=10us)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.8,+ "conditions": "tp=10us",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-MOSFET)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-MOSFET)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-MOSFET, note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -0.66,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-MOSFET, tp=10us)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.2,+ "typ": null,+ "max": null,+ "conditions": "tp=10us",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 833,+ "max": null,+ "conditions": "Surface mounted on FR4 board, minimum recommended pad size (note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =20V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "uA",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "VGS =±10V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.35,+ "typ": null,+ "max": 1.1,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 380,+ "conditions": "VGS =4.5V, ID =0.65A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 450,+ "conditions": "VGS =2.5V, ID =0.55A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "VGS =1.8V, ID =0.45A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 79,+ "max": 120,+ "conditions": "VDS =16V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDS =16V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 9,+ "max": 15,+ "conditions": "VDS =16V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IS=0.15A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Forward transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 1.6,+ "max": null,+ "conditions": "VDS =10V, ID =0.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6.7,+ "max": null,+ "conditions": "VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Turn-on rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 4.8,+ "max": null,+ "conditions": "VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 17.3,+ "max": null,+ "conditions": "VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "N-ch Turn-off fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7.4,+ "max": null,+ "conditions": "VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS =-20V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "uA",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "VGS =±10V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.35,+ "typ": null,+ "max": -1.1,+ "conditions": "VDS =VGS, ID =-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 520,+ "conditions": "VGS =-4.5V, ID =-1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 700,+ "conditions": "VGS =-2.5V, ID =-0.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 113,+ "max": 170,+ "conditions": "VDS =-16V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 15,+ "max": 25,+ "conditions": "VDS =-16V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 9,+ "max": 15,+ "conditions": "VDS =-16V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "IS=-0.5A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 950,+ "max": null,+ "conditions": "VGS =-1.8V, ID =-0.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Forward transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 1.2,+ "max": null,+ "conditions": "VDS =-10V, ID =-0.54A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Turn-on rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 5.8,+ "max": null,+ "conditions": "VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 32.7,+ "max": null,+ "conditions": "VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "P-ch Turn-off fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20.3,+ "max": null,+ "conditions": "VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -206,4 +741,4 @@ "visibility": { "public": true }-}+}