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CJX3439K

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Changjing MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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CJX3439K

Changjing · MOSFETs · SOT-563

CJX3439K from Changjing, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (CJ3134K section), rated VDS 20 V and ID 0.75 A continuous.
2 G1 input ESD-protected gate of the N-channel MOSFET, rated VGS ±12 V with threshold 0.35 to 1.1 V.
3 D2 passive Drain of the P-channel MOSFET (CJ3139K section), rated VDS -20 V and ID -0.66 A continuous.
4 S2 passive Source of the P-channel MOSFET, rated VDS -20 V and ID -0.66 A continuous.
5 G2 input ESD-protected gate of the P-channel MOSFET, rated VGS ±12 V with threshold -0.35 to -1.1 V.
6 D1 passive Drain of the N-channel MOSFET, rated VDS 20 V and pulsed IDM 1.8 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-MOSFET) VDS 20 V 1
Gate-Source Voltage (N-MOSFET) VGS -12 12 V 1
Continuous Drain Current (N-MOSFET, note 1) ID 0.75 A 1
Pulsed Drain Current (N-MOSFET, tp=10us) IDM 1.8 A tp=10us 1
Drain-Source Voltage (P-MOSFET) VDS -20 V 1
Gate-Source Voltage (P-MOSFET) VGS -12 12 V 1
Continuous Drain Current (P-MOSFET, note 1) ID -0.66 A 1
Pulsed Drain Current (P-MOSFET, tp=10us) IDM -1.2 A tp=10us 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Lead Temperature for Soldering Purposes TL 260 ℃ 1/8 in from case for 10 s 1
Thermal Resistance from Junction to Ambient RθJA 833 ℃/W Surface mounted on FR4 board, minimum recommended pad size (note 1) 1
N-ch Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250µA 2
N-ch Zero gate voltage drain current IDSS 1 µA VDS =20V, VGS = 0V 2
N-ch Gate-body leakage current IGSS -20 20 uA VGS =±10V, VDS = 0V 2
N-ch Gate threshold voltage VGS(th) 0.35 1.1 V VDS =VGS, ID =250µA 2
N-ch Drain-source on-resistance RDS(on) 380 mΩ VGS =4.5V, ID =0.65A 2
N-ch Drain-source on-resistance RDS(on) 450 mΩ VGS =2.5V, ID =0.55A 2
N-ch Drain-source on-resistance RDS(on) 800 mΩ VGS =1.8V, ID =0.45A 2
N-ch Input Capacitance Ciss 79 120 pF VDS =16V, VGS =0V, f =1MHz 2
N-ch Output Capacitance Coss 13 20 pF VDS =16V, VGS =0V, f =1MHz 2
N-ch Reverse Transfer Capacitance Crss 9 15 pF VDS =16V, VGS =0V, f =1MHz 2
N-ch Diode forward voltage VSD 1.2 V IS=0.15A, VGS = 0V 2
N-ch Forward transconductance gFS 1.6 S VDS =10V, ID =0.8A 2
N-ch Turn-on delay time td(on) 6.7 ns VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω 2
N-ch Turn-on rise time tr 4.8 ns VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω 2
N-ch Turn-off delay time td(off) 17.3 ns VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω 2
N-ch Turn-off fall time tf 7.4 ns VGS=4.5V, VDS=10V, ID=500mA, RGEN=10Ω 2
P-ch Drain-source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID =-250µA 2
P-ch Zero gate voltage drain current IDSS -1 µA VDS =-20V, VGS = 0V 2
P-ch Gate-body leakage current IGSS -20 20 uA VGS =±10V, VDS = 0V 2
P-ch Gate threshold voltage VGS(th) -0.35 -1.1 V VDS =VGS, ID =-250µA 2
P-ch Drain-source on-resistance RDS(on) 520 mΩ VGS =-4.5V, ID =-1A 2
P-ch Drain-source on-resistance RDS(on) 700 mΩ VGS =-2.5V, ID =-0.8A 2
P-ch Input Capacitance Ciss 113 170 pF VDS =-16V, VGS =0V, f =1MHz 2
P-ch Output Capacitance Coss 15 25 pF VDS =-16V, VGS =0V, f =1MHz 2
P-ch Reverse Transfer Capacitance Crss 9 15 pF VDS =-16V, VGS =0V, f =1MHz 2
P-ch Diode forward voltage VSD -1.2 V IS=-0.5A, VGS = 0V 2
P-ch Drain-source on-resistance RDS(on) 950 mΩ VGS =-1.8V, ID =-0.5A 2
P-ch Forward transconductance gFS 1.2 S VDS =-10V, ID =-0.54A 2
P-ch Turn-on delay time td(on) 9 ns VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω 2
P-ch Turn-on rise time tr 5.8 ns VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω 2
P-ch Turn-off delay time td(off) 32.7 ns VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω 2
P-ch Turn-off fall time tf 20.3 ns VGS=-4.5V, VDS=-10V, ID=-200mA, RGEN=10Ω 2

CAD (KiCad official)

  • Symbol: CJX3439K
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: cjx3439k-etched.step / cjx3439k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjx3439k.step / cjx3439k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 4d1e144129e79a57, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF