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CJX3139K
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Changjiang Electronics Tech (CJ) MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJX3139K
Changjiang Electronics Tech (CJ) · MOSFETs · SOT-563
CJX3139K from Changjiang Electronics Tech (CJ), in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1, with drain-source voltage rated -20 V and continuous drain current -0.66 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with gate-source voltage rated ±12 V and threshold voltage -0.35 V to -1.1 V. |
| 3 | D2 | passive | Drain of P-channel MOSFET 2, with drain-source voltage rated -20 V and continuous drain current -0.66 A (pulsed -2.64 A). |
| 4 | S2 | passive | Source of P-channel MOSFET 2, with drain-source voltage rated -20 V and continuous drain current -0.66 A. |
| 5 | G2 | input | Gate of P-channel MOSFET 2, with gate-source voltage rated ±12 V and threshold voltage -0.35 V to -1.1 V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1, with drain-source voltage rated -20 V and continuous drain current -0.66 A (pulsed -2.64 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID(DC) | -0.66 | A | 1 | |||
| Drain Current-Pulsed | IDM(pulse) | -2.64 | A | Repetitive rating (note 1) | 1 | ||
| Power Dissipation | PD | 150 | mW | note 2: no heat sink, Ta=25℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 833 | ℃/W | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID =-250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -0.35 | -1.1 | V | VDS =VGS, ID =-250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -20 | 20 | µA | VDS =0V, VGS =±10V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS =-20V, VGS =0V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 520 | mΩ | VGS =-4.5V, ID =-1A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 700 | mΩ | VGS =-2.5V, ID =-800mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 950 | mΩ | VGS =-1.8V, ID =-500mA | 1 | ||
| Drain-Source Diode Forward Voltage | VSD | -1.2 | V | IS=-0.5A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
CJX3139K - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
cjx3139k-etched.step/cjx3139k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjx3139k.step/cjx3139k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256
9dfe9a004d8dc002, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJX3139K
**Changjiang Electronics Tech (CJ)** · MOSFETs · SOT-563
CJX3139K from Changjiang Electronics Tech (CJ), in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1, with drain-source voltage rated -20 V and continuous drain current -0.66 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with gate-source voltage rated ±12 V and threshold voltage -0.35 V to -1.1 V. |
| 3 | D2 | passive | Drain of P-channel MOSFET 2, with drain-source voltage rated -20 V and continuous drain current -0.66 A (pulsed -2.64 A). |
| 4 | S2 | passive | Source of P-channel MOSFET 2, with drain-source voltage rated -20 V and continuous drain current -0.66 A. |
| 5 | G2 | input | Gate of P-channel MOSFET 2, with gate-source voltage rated ±12 V and threshold voltage -0.35 V to -1.1 V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1, with drain-source voltage rated -20 V and continuous drain current -0.66 A (pulsed -2.64 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | | | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current-Continuous | ID(DC) | -0.66 | | | A | | 1 |
| Drain Current-Pulsed | IDM(pulse) | -2.64 | | | A | Repetitive rating (note 1) | 1 |
| Power Dissipation | PD | | | 150 | mW | note 2: no heat sink, Ta=25℃ | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 833 | ℃/W | | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID =-250µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -0.35 | | -1.1 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-Body Leakage Current | IGSS | -20 | | 20 | µA | VDS =0V, VGS =±10V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS =-20V, VGS =0V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 520 | mΩ | VGS =-4.5V, ID =-1A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 700 | mΩ | VGS =-2.5V, ID =-800mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 950 | | mΩ | VGS =-1.8V, ID =-500mA | 1 |
| Drain-Source Diode Forward Voltage | VSD | | | -1.2 | V | IS=-0.5A, VGS = 0V | 2 |
## CAD (KiCad official)
- Symbol: `CJX3139K`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `cjx3139k-etched.step` / `cjx3139k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjx3139k.step` / `cjx3139k.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/cjx3139k-datasheet.pdf) (5 pp, sha256 `9dfe9a004d8dc002`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjx3139k-datasheet.pdf)