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Contents

README

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CJX3134K

Changjing · MOSFETs · SOT-563

CJX3134K from Changjing, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1 in the dual device, rated with the device VDS of 20 V and VGS of ±12 V.
2 G1 passive Gate terminal of N-channel MOSFET 1, with typical gate-source voltage rating of ±12 V and specified RDS(on) at 1.8 V to 4.5 V gate drive.
3 D2 passive Drain terminal of N-channel MOSFET 2 in the dual device, rated for 20 V drain-source voltage and 0.75 A continuous drain current (t ≤ 10 s).
4 S2 passive Source terminal of N-channel MOSFET 2 in the dual device, rated with the device VDS of 20 V and VGS of ±12 V.
5 G2 passive Gate terminal of N-channel MOSFET 2, with typical gate-source voltage rating of ±12 V and specified RDS(on) at 1.8 V to 4.5 V gate drive.
6 D1 passive Drain terminal of N-channel MOSFET 1 in the dual device, rated for 20 V drain-source voltage and 0.75 A continuous drain current (t ≤ 10 s).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID 0.75 A t ≤10s 1
Power dissipation PD 0.15 W note1 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 833 ℃/W 1
Gate-body leakage current IGSS -20 20 µA VGS =±10V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.35 0.54 1.1 V VDS =VGS, ID =250µA 2
Drain-source on-resistance RDS(on) 270 380 mΩ VGS =4.5V, ID =0.65A 2
Drain-source on-resistance RDS(on) 320 450 mΩ VGS =2.5V, ID =0.55A 2
Drain-source on-resistance RDS(on) 390 800 mΩ VGS =1.8V, ID =0.45A 2
Input Capacitance Ciss 79 120 pF VDS =16V,VGS =0V,f =1MHz 2
Output Capacitance Coss 13 20 pF VDS =16V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 9 15 pF VDS =16V,VGS =0V,f =1MHz 2
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =20V,VGS = 0V 2
Forward transconductance gFS 1.6 S VDS =10V, ID =0.8A 2
Diode forward voltage VSD 1.2 V IS=0.15A, VGS = 0V 2
Turn-on delay time td(on) 6.7 ns VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω 2
Turn-on rise time tr 4.8 ns VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω 2
Turn-off delay time td(off) 17.3 ns VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω 2
Turn-off fall time tf 7.4 ns VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω 2
Total Gate Charge Qg 20 nC VDS =10V,VGS =4.5V,ID =7A 2
Gate-Source Charge Qgs 1 nC VDS =10V,VGS =4.5V,ID =7A 2
Gate-Drain Charge Qgd 4 nC VDS =10V,VGS =4.5V,ID =7A 2

CAD (KiCad official)

  • Symbol: CJX3134K
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: cjx3134k-etched.step / cjx3134k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjx3134k.step / cjx3134k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 1250da034078acc3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF