component
CJW1012
Public Made by Adomby adom
Changjiang Electronics Tech (CJ) MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCJW1012
Changjiang Electronics Tech (CJ) · MOSFETs · SOT-323
CJW1012 from Changjiang Electronics Tech (CJ), in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±12 V. |
| 2 | SOURCE | passive | Source terminal of the MOSFET, the reference for VGS; the body diode forward voltage VSD is 1.2 V max at IS = 0.15 A, VGS = 0 V. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDSS at 20 V and continuous drain current ID at 500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-323 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V | Maximum ratings, Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | Maximum ratings, printed as ±12 | 1 | |
| Drain Current-Continuous | ID(DC) | 500 | mA | Maximum ratings | 1 | ||
| Drain Current-Pulsed | IDM(pulse) | 1000 | mA | Pulsed, note 1: pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | 150 | mW | Ta=25℃, note 2 (no heat sink) | 1 | |||
| Maximum Power Dissipation | PD | 275 | mW | Tc=25℃, note 3 (infinite heat sink) | 1 | ||
| Storage Temperature (row as printed) | Tj | 150 | ℃ | 1 | |||
| Junction Temperature (row as printed) | Tstg | -55 | 150 | ℃ | Printed as -55 ~+150 | 1 | |
| Thermal Resistance from Junction to Ambient | RθJA | 833 | ℃/W | Maximum ratings table | 1 | ||
| Thermal Resistance from Junction to Case | RθJC | 455 | ℃/W | Maximum ratings table | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 0.45 | 1.2 | V | VDS =VGS, ID =250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -1 | 1 | µA | VDS =0V, VGS =±4.5V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS =16V, VGS =0V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 700 | mΩ | VGS =4.5V, ID =600mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 850 | mΩ | VGS =2.5V, ID =500mA | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | IS=0.15A, VGS = 0V, note 5 pulse test | 2 |
CAD (KiCad official)
- Symbol:
CJW1012 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
cjw1012-etched.step/cjw1012-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjw1012.step/cjw1012.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256
e0cff21a68aa202d, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).