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CJU80N03

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Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJU80N03

Changjing · MOSFETs · TO-252-2L

CJU80N03 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET; the datasheet limits the gate-source voltage to VGS ±20 V.
2 DRAIN passive Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at VDS 30 V and the continuous drain current at ID 80 A.
3 SOURCE passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous drain-source diode forward current at IS 80 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V Ta=25℃ 1
Gate-Source Voltage VGS -20 20 V Ta=25℃ 1
Continuous Drain Current ID 80 A Ta=25℃ 1
Pulsed Drain Current IDM 320 A Ta=25℃ 1
Single Pulsed Avalanche Energy EAS 306 mJ VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C 1
Power Dissipation PD 1.25 W Ta=25℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Ta=25℃ 1
Junction Temperature TJ 150 ℃ Ta=25℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Lead Temperature for Soldering Purposes TL 260 ℃ 1/8'' from case for 10s 1
Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =30V, VGS =0V 2
Gate-body leakage current IGSS -100 100 nA VDS =0V, VGS =±20V 2
Gate-threshold voltage VGS(th) 1 1.5 3 V VDS =VGS, ID =250µA 2
Static drain-source on-state resistance RDS(on) 5.1 6.5 mΩ VGS =10V, ID =30A 2
Static drain-source on-state resistance RDS(on) 7.1 10 mΩ VGS =5V, ID =24A 2
Forward transconductance gFS 20 S VDS =5V, ID =24A 2
Continuous drain-source diode forward current IS 80 A 2
Pulsed drain-source diode forward current ISM 320 A 2
Drain-source diode forward voltage VSD 1.2 V VGS =0V, IS=24A 2
Input capacitance Ciss 2330 pF VDS =15V,VGS =0V, f =1MHz 2
Output capacitance Coss 460 pF VDS =15V,VGS =0V, f =1MHz 2
Reverse transfer capacitance Crss 230 pF VDS =15V,VGS =0V, f =1MHz 2
Total gate charge Qg 51 nC VDS=10V, VGS=10V, ID=30A 2
Gate-source charge Qgs 14 nC VDS=10V, VGS=10V, ID=30A 2
Gate-drain charge Qgd 11 nC VDS=10V, VGS=10V, ID=30A 2
Turn-on delay time td(on) 20 ns VDD=15V,ID=30A, VGS=10V,RG=2.7Ω 2
Turn-on rise time tr 15 ns VDD=15V,ID=30A, VGS=10V,RG=2.7Ω 2
Turn-off delay time td(off) 60 ns VDD=15V,ID=30A, VGS=10V,RG=2.7Ω 2
Turn-off fall time tf 10 ns VDD=15V,ID=30A, VGS=10V,RG=2.7Ω 2

CAD (KiCad official)

  • Symbol: CJU80N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju80n03-etched.step / cju80n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju80n03.step / cju80n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 85514c7a54f7e1d8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF