# CJU65SN10L

**Changjing** · MOSFETs · TO-252-2L

CJU65SN10L from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of VGS ±20 V. |
| 2 | DRAIN | passive | Drain terminal, rated for a drain-source voltage of 100 V and a continuous drain current of 65 A. |
| 3 | SOURCE | passive | Source terminal of the MOSFET, with a continuous drain-source diode forward current IS of 65 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 65 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 260 | A |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 125 | mJ |  | 1 |
| Power Dissipation | PD |  |  | 125 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 100 | ℃/W |  | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | VGS = 0V, ID =250µA | 2 |
| Zero gate voltage drain current (TJ=25℃) | IDSS |  |  | 1 | µA | VDS =80V, VGS =0V, TJ =25℃ | 2 |
| Zero gate voltage drain current (TJ=125℃) | IDSS |  | 13.5 | 100 | µA | VDS =80V, VGS =0V, TJ =125℃ | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate-threshold voltage | VGS(th) | 1.4 | 2.1 | 2.5 | V | VDS =VGS, ID =250µA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 15.5 | 21 | mΩ | VGS =4.5V, ID =10A | 2 |
| Thermal Resistance from Junction to Case | RθJC |  | 1 |  | ℃/W |  | 4 |

## CAD (KiCad official)

- Symbol: `CJU65SN10L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `cju65sn10l-etched.step` / `cju65sn10l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cju65sn10l.step` / `cju65sn10l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906832473317376) (6 pp, sha256 `c288353e4baaf839`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cju65sn10l-datasheet.pdf)