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CJU50SN10

Public Made by Adom

by adom

Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJU50SN10

Changjing · MOSFETs · TO-252-2L

CJU50SN10 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V.
2 DRAIN passive Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 50 A.
3 SOURCE passive Source terminal of the MOSFET; the body diode has a forward voltage VSD of 1.3 V at IS = 20 A, VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 100 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =100V,VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS =VGS, ID =250µA 2
Drain-source on-resistance RDS(on) 16.5 22 mΩ VGS =10V, ID =10A 2
Body diode voltage VSD 1.3 V IS=20A,VGS=0V 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A 1
Pulsed Drain Current IDM 170 A 1
Maximum Power Dissipation PD 50 W 1
Avalanche energy EAS 80 mJ VDD=50V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃ 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Case RθJC 2.5 ℃/W 1
Thermal Resistance from Junction to Ambient RθJA 62 ℃/W Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25 ℃ 1
Forward transconductance gFS 51 S VDS =5.0V, ID =20A 2
Total gate charge Qg 15.7 nC VDS =50V,VGS =10V,ID =5A 2
Gate-source charge Qgs 2.6 nC VDS =50V,VGS =10V,ID =5A 2
Gate-drain charge Qgd 4 nC VDS =50V,VGS =10V,ID =5A 2
Input Capacitance Ciss 975.3 pF VDS =50V,VGS =0V,f =100kHz 2
Output Capacitance Coss 175 pF VDS =50V,VGS =0V,f =100kHz 2
Reverse Transfer Capacitance Crss 9.4 pF VDS =50V,VGS =0V,f =100kHz 2
Turn-on delay time td(on) 16.5 ns VGS=10V, VDS=50V, RG=10Ω, ID=5A 2
Turn-on rise time tr 3.7 ns VGS=10V, VDS=50V, RG=10Ω, ID=5A 2
Turn-off delay time td(off) 64.7 ns VGS=10V, VDS=50V, RG=10Ω, ID=5A 2
Turn-off fall time tf 44 ns VGS=10V, VDS=50V, RG=10Ω, ID=5A 2

CAD (KiCad official)

  • Symbol: CJU50SN10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju50sn10-etched.step / cju50sn10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju50sn10.step / cju50sn10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 bc6b43907f436e05, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF