component
CJU50P06
Public Made by Adomby adom
Changjing Pre-ordered transistors, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| cju50p06-etched.glb | 15d ago |
| cju50p06-etched.step | 15d ago |
| cju50p06-hero.glb | 15d ago |
| cju50p06-hero.overlay.json | 15d ago |
| cju50p06.glb | 15d ago |
| cju50p06.kicad_mod | 15d ago |
| cju50p06.kicad_sym | 15d ago |
| cju50p06.lbr | 15d ago |
| cju50p06.step | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
CJU50P06
Changjing · Pre-ordered transistors · TO-252-2L
CJU50P06 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 to -3.0 V at ID=-250µA. |
| 2 | DRAIN | passive | Drain terminal (also the tab of the TO-252-2L package); drain-source voltage rated -60 V and continuous drain current -50 A. |
| 3 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous source diode current IS is -50 A and pulsed ISM is -200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | -50 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | Ta=25℃ | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 196 | mJ | Ta=25℃ | 1 | ||
| Power Dissipation | PD | 75 | W | Ta=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 100 | ℃/W | 1 in2 FR-4 board, 2oz copper, still air, Ta=25℃ | 1 | ||
| Thermal Resistance from Junction to Case | RθJC | 1.66 | ℃/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS = 0V, ID =-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =-48V, VGS =0V, TJ =25℃ | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate-threshold voltage | VGS(th) | -1 | -2.2 | -3 | V | VDS =VGS, ID =-250µA | 2 |
| Drain-source diode forward voltage | VSD | -1.2 | V | VGS =0V, IS=-20A | 2 | ||
| Continuous drain-source diode forward current | IS | -50 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | -200 | A | 2 | |||
| Static drain-source on-state resistance | RDS(on) | 25 | mΩ | VGS =-10V, ID =-20A | 2 | ||
| Gate resistance | Rg | 5.7 | Ω | f =1MHz | 2 |
CAD (KiCad official)
- Symbol:
CJU50P06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
cju50p06-etched.step/cju50p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cju50p06.step/cju50p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
ffa7aa07dd6276dc, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).