# CJU30P10A

**Changjing** · MOSFETs · TO-252-2L

CJU30P10A from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of ±20 V. |
| 2 | DRAIN | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of -100 V and a continuous drain current ID of -30 A. |
| 3 | SOURCE | passive | Source terminal of the MOSFET, serving as the reference for the gate-source voltage rating of ±20 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain-Source Voltage | VDS | -100 |  |  | V |  | 1 |
| Continuous Drain Current | ID | -30 |  |  | A | TC=25℃ (note 1) | 1 |
| Pulsed Drain Current | IDM | -120 |  |  | A | PW≤10μs, Duty cycle≤1% (note 2) | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Case | RθJC |  |  | 1.4 | ℃/W |  | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -100 |  |  | V | VGS = 0V, ID =-250µA | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate-threshold voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS =VGS, ID =-250µA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 48 | 55 | mΩ | VGS =-10V, ID =-15A | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 52 | 65 | mΩ | VGS =-4.5V, ID =-15A | 2 |
| Zero gate voltage drain current (TJ=25℃) | IDSS | -1 |  |  | µA | VDS =-80V, VGS =0V, TJ =25℃ | 2 |
| Zero gate voltage drain current (TJ=125℃) | IDSS | -100 |  |  | µA | VDS =-80V, VGS =0V, TJ =125℃ | 2 |
| Drain-source diode forward voltage | VSD | -1.2 |  |  | V | VGS =0V | 2 |
| Continuous drain-source diode forward current | IS | -30 |  |  | A |  | 2 |
| Pulsed drain-source diode forward current | ISM | -120 |  |  | A |  | 2 |

## CAD (KiCad official)

- Symbol: `CJU30P10A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `cju30p10a-etched.step` / `cju30p10a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cju30p10a.step` / `cju30p10a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](docs/cju30p10a-datasheet.pdf) (6 pp, sha256 `15e1cb377a391a2d`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cju30p10a-datasheet.pdf)