component
CJU20N06A
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Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJU20N06A
Changjing · MOSFETs · TO-252-2L
CJU20N06A from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate control input with threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250µA and gate leakage tested at VGS=±20V (±100 nA max). |
| 2 | DRAIN | passive | Drain terminal (also the exposed tab) with V(BR)DSS of 60 V min and 20 A continuous drain current rating. |
| 3 | SOURCE | passive | Source terminal of the N-channel MOSFET with RDS(on) of 26 mΩ max at VGS=10V, ID=10A and 35 mΩ max at VGS=4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS =VGS, ID =250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | 26 | 35 | mΩ | VGS =10V, ID =10A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 35 | 50 | mΩ | VGS =4.5V, ID =10A | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =48V, VGS =0V, TJ =25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VDS =48V, VGS =0V, TJ =125℃ | 2 | ||
| Drain-source diode forward voltage | VSD | 1.2 | V | VGS =0V, IS=10A | 2 | ||
| Continuous drain-source diode forward current | IS | 20 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 80 | A | 2 | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
CJU20N06A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
cju20n06a-etched.step/cju20n06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cju20n06a.step/cju20n06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
ffe4c40394613cdd, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJU20N06A
**Changjing** · MOSFETs · TO-252-2L
CJU20N06A from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate control input with threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250µA and gate leakage tested at VGS=±20V (±100 nA max). |
| 2 | DRAIN | passive | Drain terminal (also the exposed tab) with V(BR)DSS of 60 V min and 20 A continuous drain current rating. |
| 3 | SOURCE | passive | Source terminal of the N-channel MOSFET with RDS(on) of 26 mΩ max at VGS=10V, ID=10A and 35 mΩ max at VGS=4.5V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID =250µA | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate-threshold voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS =VGS, ID =250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | | 26 | 35 | mΩ | VGS =10V, ID =10A | 2 |
| Static drain-source on-state resistance | RDS(on) | | 35 | 50 | mΩ | VGS =4.5V, ID =10A | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =48V, VGS =0V, TJ =25℃ | 2 |
| Zero gate voltage drain current | IDSS | | | 100 | µA | VDS =48V, VGS =0V, TJ =125℃ | 2 |
| Drain-source diode forward voltage | VSD | | | 1.2 | V | VGS =0V, IS=10A | 2 |
| Continuous drain-source diode forward current | IS | | | 20 | A | | 2 |
| Pulsed drain-source diode forward current | ISM | | | 80 | A | | 2 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `CJU20N06A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `cju20n06a-etched.step` / `cju20n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cju20n06a.step` / `cju20n06a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/cju20n06a-datasheet.pdf) (6 pp, sha256 `ffe4c40394613cdd`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cju20n06a-datasheet.pdf)