component

CJU15N10

Public Made by Adom

by adom

Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorscju15n10factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
cju15n10 / README.md
History Download
Ray Publish 0.1.0 1ec45e2 16d ago

CJU15N10

Changjing · MOSFETs · TO-252-2L

CJU15N10 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal; the datasheet limits the gate-source voltage VGS to ±20 V.
2 DRAIN passive Drain terminal; the datasheet limits drain-source voltage VDS to 100 V and continuous drain current ID to 15 A.
3 SOURCE passive Source terminal; the datasheet gives no source-specific rating beyond the device-level ratings.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 15 A Ta=25℃ 1
Pulsed Drain Current IDM 60 A PW≤10μs, duty cycle≤1% 1
Single Pulsed Avalanche Energy EAS 49 mJ VDD=25V, VGS=10V, L=0.5mH, Rg=25Ω, starting TJ=25℃ 1
Power Dissipation PD 45 W Ta=25℃ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Mounted on 1 in² FR-4 board, 2oz copper, still air, Ta=25℃ 1
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250µA 2
Zero gate voltage drain current (TJ=25℃) IDSS 1 µA VDS=80V, VGS=0V, TJ=25℃ 2
Zero gate voltage drain current (TJ=125℃) IDSS 100 µA VDS=80V, VGS=0V, TJ=125℃ 2
Gate-body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate-threshold voltage VGS(th) 1 2.5 3 V VDS=VGS, ID=250µA 2
Continuous drain-source diode forward current IS 15 A 2
Pulsed drain-source diode forward current ISM 60 A 2
Static drain-source on-state resistance RDS(on) 70 mΩ VGS=10V, ID=8A 2
Drain-source diode forward voltage VSD 1.2 V VGS=0V, IS=8A 2
Input capacitance Ciss 773 pF VDS=25V, VGS=0V, f=100KHz 2
Output capacitance Coss 46 pF VDS=25V, VGS=0V, f=100KHz 2
Reverse transfer capacitance Crss 43 pF VDS=25V, VGS=0V, f=100KHz 2
Gate resistance Rg 1.5 Ω f=1MHz 2
Total gate charge Qg 18 nC VGS=10V, VDS=50V, ID=10A 2
Gate-source charge Qgs 2.8 nC VGS=10V, VDS=50V, ID=10A 2
Gate-drain charge Qgd 7.4 nC VGS=10V, VDS=50V, ID=10A 2
Turn-on delay time td(on) 15 ns VDD=25V, RL=5Ω, VGS=10V, RG=1.0Ω 2
Turn-on rise time tr 33 ns VDD=25V, RL=5Ω, VGS=10V, RG=1.0Ω 2
Turn-off delay time td(off) 41 ns VDD=25V, RL=5Ω, VGS=10V, RG=1.0Ω 2
Turn-off fall time tf 6 ns VDD=25V, RL=5Ω, VGS=10V, RG=1.0Ω 2

CAD (KiCad official)

  • Symbol: CJU15N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju15n10-etched.step / cju15n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju15n10.step / cju15n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 888c9431fed6bdfd, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF