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CJU02N60M1

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Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJU02N60M1

Changjing · MOSFETs · TO-252-2L

CJU02N60M1 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate of the MOSFET, rated for VGS of ±30 V per the maximum ratings, with gate threshold VGS(th) of 2.0 V min, 3.4 V typ and 4.0 V max at VDS=VGS, ID=250 µA.
2 DRAIN passive Drain of the MOSFET, rated for drain-source voltage VDS of 600 V, continuous drain current ID of 2 A and pulsed drain current IDM of 8 A.
3 SOURCE passive Source of the MOSFET, with body-diode forward voltage VSD of 1.4 V typ at IS=2 A and continuous diode forward current IS of 2.0 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=600V, VGS=0V 2
Gate-body leakage current IGSS -100 100 nA VDS=0V, VGS=±30V 2
Gate-threshold voltage VGS(th) 2 3.4 4 V VDS=VGS, ID=250µA 2
Static drain-source on-state resistance RDS(on) 2.7 Ω VGS=10V, ID=1A 2
Drain-Source Voltage VDS 600 V Ta=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -30 30 V Ta=25℃ unless otherwise noted 1
Continuous Drain Current ID 2 A Ta=25℃ unless otherwise noted 1
Pulsed Drain Current IDM 8 A Ta=25℃ unless otherwise noted 1
Single Pulsed Avalanche Energy EAS 88 mJ VDD=150V, VGS=10V, L=10mH, Rg=25Ω, starting TJ=25℃ (note 3) 1
Power Dissipation PD 31 W Ta=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Still air, TA=25℃ (note 6) 1
Thermal Resistance from Junction to Case RθJC 4 ℃/W 1

CAD (KiCad official)

  • Symbol: CJU02N60M1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju02n60m1-etched.step / cju02n60m1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju02n60m1.step / cju02n60m1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 d9af4d97da1f6280, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF