component
CJU02N60
Public Made by Adomby adom
Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| cju02n60-etched.glb | 17d ago |
| cju02n60-etched.step | 17d ago |
| cju02n60-hero.glb | 17d ago |
| cju02n60-hero.overlay.json | 17d ago |
| cju02n60.glb | 17d ago |
| cju02n60.kicad_mod | 17d ago |
| cju02n60.kicad_sym | 17d ago |
| cju02n60.lbr | 17d ago |
| cju02n60.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
CJU02N60
Changjing · MOSFETs · TO-252-2L
CJU02N60 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V (VGS) per the maximum ratings. |
| 2 | DRAIN | passive | Drain terminal, rated for a drain-source voltage of 600 V and a continuous drain current of 2 A at Ta=25℃. |
| 3 | SOURCE | passive | Source terminal; the datasheet gives a forward on voltage VSD of 1.6 V at VGS=0V and IS=2A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | 1 | |||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Power Dissipation | PD | 1.25 | 1 | ||||
| Single Pulsed Avalanche Energy | EAS | 128 | mJ | Tj=25℃, VDD=50V, L=64mH, IAS=2A, RG=25Ω | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -50 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 100 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 600V, VGS = 0V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 4.4 | Ω | VGS = 10V, ID = 1A | 2 | ||
| Forward Transconductance | gFS | 1 | S | VDS = 50V, ID = 1A | 2 | ||
| Forward On Voltage | VSD | 1.6 | V | VGS = 0V, IS = 2A | 2 |
CAD (KiCad official)
- Symbol:
CJU02N60 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
cju02n60-etched.step/cju02n60-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cju02n60.step/cju02n60.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
2c112a724854c9d4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).