component
CJQ60P05
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
cjq60p05: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
6db68f8
24d ago
CJQ60P05
Changjing · MOSFETs · SOP-8
CJQ60P05 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally with pins 2 and 3; drain-source rating is -60V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 3; continuous drain current is -5A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 2; gate-source voltage limit is ±20V. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit is ±20V and threshold is -1.5 to -3.5V at ID=-250µA. |
| 5 | D | passive | Drain of the MOSFET, tied internally with pins 6, 7 and 8; VDS -60V, ID -5A, RDS(ON) below 80mΩ at VGS=-10V. |
| 6 | D | passive | Drain of the MOSFET, tied internally with pins 5, 7 and 8; pulsed drain current is -25A. |
| 7 | D | passive | Drain of the MOSFET, tied internally with pins 5, 6 and 8; drain-source voltage is -60V maximum. |
| 8 | D | passive | Drain of the MOSFET, tied internally with pins 5, 6 and 7; continuous drain current is -5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -5 | A | 1 | |||
| Pulsed Drain Current | IDM | -25 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 inch from case for 10 s | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V ID=-250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -3.5 | -1.5 | V | VDS=VGS,ID=-250µA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 80 | mΩ | VGS=-10V, ID=-5A | 2 | ||
| Diode Forward Current | IS | -5 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-3A | 2 | ||
| Forward Transconductance | gFS | 5 | S | VDS=-15V,ID=-5A | 2 | ||
| Input Capacitance | Clss | 1450 | pF | VDS=-20V,VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 145 | pF | VDS=-20V,VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 110 | pF | VDS=-20V,VGS=0V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 8 | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 9 | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 65 | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 30 | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 | ||
| Total Gate Charge | Qg | 26 | nC | VDS=-30V,ID=-5A, VGS=-10V | 2 | ||
| Gate-Source Charge | Qgs | 4.5 | nC | VDS=-30V,ID=-5A, VGS=-10V | 2 | ||
| Gate-Drain Charge | Qgd | 7 | nC | VDS=-30V,ID=-5A, VGS=-10V | 2 |
CAD (KiCad official)
- Symbol:
CJQ60P05 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq60p05-etched.step/cjq60p05-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq60p05.step/cjq60p05.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
2758e73f1c077652, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJQ60P05
**Changjing** · MOSFETs · SOP-8
CJQ60P05 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally with pins 2 and 3; drain-source rating is -60V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 3; continuous drain current is -5A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 2; gate-source voltage limit is ±20V. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit is ±20V and threshold is -1.5 to -3.5V at ID=-250µA. |
| 5 | D | passive | Drain of the MOSFET, tied internally with pins 6, 7 and 8; VDS -60V, ID -5A, RDS(ON) below 80mΩ at VGS=-10V. |
| 6 | D | passive | Drain of the MOSFET, tied internally with pins 5, 7 and 8; pulsed drain current is -25A. |
| 7 | D | passive | Drain of the MOSFET, tied internally with pins 5, 6 and 8; drain-source voltage is -60V maximum. |
| 8 | D | passive | Drain of the MOSFET, tied internally with pins 5, 6 and 7; continuous drain current is -5A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | -5 | A | | 1 |
| Pulsed Drain Current | IDM | | | -25 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 inch from case for 10 s | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 100 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V ID=-250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -3.5 | | -1.5 | V | VDS=VGS,ID=-250µA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | | 80 | mΩ | VGS=-10V, ID=-5A | 2 |
| Diode Forward Current | IS | | | -5 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-3A | 2 |
| Forward Transconductance | gFS | | 5 | | S | VDS=-15V,ID=-5A | 2 |
| Input Capacitance | Clss | | 1450 | | pF | VDS=-20V,VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 145 | | pF | VDS=-20V,VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 110 | | pF | VDS=-20V,VGS=0V, f=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 8 | | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 |
| Turn-on Rise Time | tr | | 9 | | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 65 | | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 |
| Turn-Off Fall Time | tf | | 30 | | ns | VDD=-30V, RL=30Ω, VGS=-10V, RGEN=6Ω | 2 |
| Total Gate Charge | Qg | | 26 | | nC | VDS=-30V,ID=-5A, VGS=-10V | 2 |
| Gate-Source Charge | Qgs | | 4.5 | | nC | VDS=-30V,ID=-5A, VGS=-10V | 2 |
| Gate-Drain Charge | Qgd | | 7 | | nC | VDS=-30V,ID=-5A, VGS=-10V | 2 |
## CAD (KiCad official)
- Symbol: `CJQ60P05`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjq60p05-etched.step` / `cjq60p05-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjq60p05.step` / `cjq60p05.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589784870932688896) (5 pp, sha256 `2758e73f1c077652`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjq60p05-datasheet.pdf)