component
CJQ16P03
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCJQ16P03
Changjing · MOSFETs · SOP-8
CJQ16P03 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
| 4 | G | input | Gate terminal; the gate-source voltage is limited to ±20 V per the maximum ratings. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and continuous drain current of -16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -16 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current | IDM | -64 | A | PW≤10μs, duty cycle≤1% | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 41.7 | ℃/W | Mounted on 1 in² FR-4 board, 2oz Cu, still air, Ta=25℃, t≤10sec | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Continuous drain-source diode forward current | IS | -16 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | -64 | A | 2 | |||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate-threshold voltage | VGS(th) | -1 | -1.65 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | 5.1 | 6.5 | mΩ | VGS = -10V, ID = -6A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 8.1 | 10 | mΩ | VGS = -4.5V, ID = -5A | 2 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS = -24V, VGS = 0V, TJ = 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | -100 | µA | VDS = -24V, VGS = 0V, TJ = 125℃ | 2 | ||
| Drain-source diode forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -2.1A | 2 | ||
| Input capacitance | Ciss | 3900 | 5900 | pF | VDS = -24V, VGS = 0V, f = 1MHz | 2 | |
| Output capacitance | Coss | 500 | 900 | pF | VDS = -24V, VGS = 0V, f = 1MHz | 2 | |
| Reverse transfer capacitance | Crss | 385 | 650 | pF | VDS = -24V, VGS = 0V, f = 1MHz | 2 | |
| Gate resistance | Rg | 7.4 | Ω | f = 1MHz | 2 | ||
| Total gate charge | Qg | 69 | 100 | nC | VGS = -10V, VDS = -24V, ID = -8A | 2 | |
| Gate-source charge | Qgs | 21 | 40 | nC | VGS = -10V, VDS = -24V, ID = -8A | 2 | |
| Gate-drain charge | Qgd | 12 | 20 | nC | VGS = -10V, VDS = -24V, ID = -8A | 2 | |
| Turn-on delay time | td(on) | 38 | ns | VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω | 2 | ||
| Turn-on rise time | tr | 16 | ns | VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω | 2 | ||
| Turn-off delay time | td(off) | 245 | ns | VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω | 2 | ||
| Turn-off fall time | tf | 90 | ns | VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω | 2 | ||
| Forward transconductance | gFS | 10 | S | VDS = -5V, ID = -14A | 2 |
CAD (KiCad official)
- Symbol:
CJQ16P03 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq16p03-etched.step/cjq16p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq16p03.step/cjq16p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
113f8039b8b8716d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).