component
CJQ14SN06
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
CJQ14SN06
Changjing · MOSFETs · SOP-8
CJQ14SN06 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel power MOSFET; absolute maximum VGS is ±20 V and continuous drain current is limited to 14 A. |
| 2 | S | passive | Source terminal of the N-channel power MOSFET; absolute maximum VGS is ±20 V and continuous drain current is limited to 14 A. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET; absolute maximum VGS is ±20 V and continuous drain current is limited to 14 A. |
| 4 | G | input | Gate terminal of the shielded-gate trench MOSFET; the datasheet gives VGS as ±20 V absolute maximum and VGS(th) of 2.5 V typical threshold. Pin 4 is not labelled S or D in the extracted drawing text, so its gate assignment is inferred from the layout. |
| 5 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
| 6 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
| 7 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
| 8 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ unless otherwise noted | 1 | |
| Continuous Drain Current | ID | 14 | A | Ta=25℃ unless otherwise noted | 1 | ||
| Pulsed Drain Current | IDM | 48 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.4 | W | Ta=25℃ unless otherwise noted | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 125 | mJ | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ℃ | 1/8'' from case for 10s | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 89 | ℃/W | Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃ (note 6) | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250uA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =60V, VGS =0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 2.5 | V | VDS =VGS, ID =250uA | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 12.8 | mΩ | VGS =4.5V, ID =10A | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 9.7 | mΩ | VGS =10V, ID =12A | 2 | ||
| Drain-source diode forward voltage | VSD | 1.3 | V | VGS =0V, IS=14A | 2 | ||
| Continuous drain-source diode forward current | IS | 14 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 48 | A | 2 | |||
| Gate resistance | Rg | 1 | 2 | Ω | f =1MHz | 2 |
CAD (KiCad official)
- Symbol:
CJQ14SN06 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq14sn06-etched.step/cjq14sn06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq14sn06.step/cjq14sn06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
ceb3210ea0a0a830, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJQ14SN06
**Changjing** · MOSFETs · SOP-8
CJQ14SN06 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel power MOSFET; absolute maximum VGS is ±20 V and continuous drain current is limited to 14 A. |
| 2 | S | passive | Source terminal of the N-channel power MOSFET; absolute maximum VGS is ±20 V and continuous drain current is limited to 14 A. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET; absolute maximum VGS is ±20 V and continuous drain current is limited to 14 A. |
| 4 | G | input | Gate terminal of the shielded-gate trench MOSFET; the datasheet gives VGS as ±20 V absolute maximum and VGS(th) of 2.5 V typical threshold. Pin 4 is not labelled S or D in the extracted drawing text, so its gate assignment is inferred from the layout. |
| 5 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
| 6 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
| 7 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
| 8 | D | passive | Drain terminal of the N-channel power MOSFET; rated for VDS of 60 V and continuous drain current of 14 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | Ta=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25℃ unless otherwise noted | 1 |
| Continuous Drain Current | ID | | | 14 | A | Ta=25℃ unless otherwise noted | 1 |
| Pulsed Drain Current | IDM | | | 48 | A | | 1 |
| Maximum Power Dissipation | PD | | | 1.4 | W | Ta=25℃ unless otherwise noted | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 125 | mJ | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | ℃ | 1/8'' from case for 10s | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 89 | ℃/W | Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃ (note 6) | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID =250uA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =60V, VGS =0V | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate-threshold voltage | VGS(th) | | 2.5 | | V | VDS =VGS, ID =250uA | 2 |
| Static drain-source on-state resistance | RDS(on) | | 12.8 | | mΩ | VGS =4.5V, ID =10A | 2 |
| Static drain-source on-state resistance | RDS(on) | | 9.7 | | mΩ | VGS =10V, ID =12A | 2 |
| Drain-source diode forward voltage | VSD | | | 1.3 | V | VGS =0V, IS=14A | 2 |
| Continuous drain-source diode forward current | IS | | | 14 | A | | 2 |
| Pulsed drain-source diode forward current | ISM | | | 48 | A | | 2 |
| Gate resistance | Rg | | 1 | 2 | Ω | f =1MHz | 2 |
## CAD (KiCad official)
- Symbol: `CJQ14SN06`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjq14sn06-etched.step` / `cjq14sn06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjq14sn06.step` / `cjq14sn06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588948777558687744) (6 pp, sha256 `ceb3210ea0a0a830`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjq14sn06-datasheet.pdf)