component
CJQ13P04
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
cjq13p04: specified limits as data (metadata.characteristics, 11 rows from the datasheet)
2 files changed
+158−1
README.md+18@@ -26,6 +26,24 @@ CJQ13P04 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | -40 | | | V | VGS=0V, ID=-250µA | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS=-40V, VGS=0V | 2 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |+| Gate-threshold voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |+| Static drain-source on-state resistance | RDS(on) | | | 11 | mΩ | VGS=-10V, ID=-10A | 2 |+| Static drain-source on-state resistance | RDS(on) | | | 14.5 | mΩ | VGS=-4.5V, ID=-8A | 2 |+| Drain-source diode forward voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A | 2 |+| Continuous drain-source diode forward current | IS | | | -13 | A | | 2 |+| Pulsed drain-source diode forward current | ISM | | | -52 | A | | 2 |+| Single pulsed avalanche energy | EAS | | | 200 | mJ | VDD=-20V, VGS=-10V, L=0.5mH, Rg=25Ω, starting TJ=25°C | 1 |+| Thermal resistance, junction to ambient | RθJA | | | 89 | ℃/W | Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃ | 1 |+ ## CAD (KiCad official) - Symbol: `CJQ13P04`
page.json+140−1@@ -178,6 +178,145 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "71deb09e143b3229",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-40V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.5,+ "max": -2.5,+ "conditions": "VDS=VGS, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "VGS=-10V, ID=-10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 14.5,+ "conditions": "VGS=-4.5V, ID=-8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V, IS=-1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain-source diode forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -13,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain-source diode forward current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -52,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulsed avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VDD=-20V, VGS=-10V, L=0.5mH, Rg=25Ω, starting TJ=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 89,+ "conditions": "Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +358,4 @@ "visibility": { "public": true }-}+}