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CJQ10SN15S
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Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJQ10SN15S
Changjing · MOSFETs · SOP-8
CJQ10SN15S from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS (±20 V maximum gate-source voltage) and the return for the 10 A continuous drain current rating. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS (±20 V maximum gate-source voltage) and the return for the 10 A continuous drain current rating. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS (±20 V maximum gate-source voltage) and the return for the 10 A continuous drain current rating. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet gives a gate-source voltage limit of ±20 V and a gate resistance Rg of 4.0 Ω typical at 1 MHz. |
| 5 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
| 6 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
| 7 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
| 8 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
CJQ10SN15S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq10sn15s-etched.step/cjq10sn15s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq10sn15s.step/cjq10sn15s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
151a28f2e5d3f5dd, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJQ10SN15S
**Changjing** · MOSFETs · SOP-8
CJQ10SN15S from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS (±20 V maximum gate-source voltage) and the return for the 10 A continuous drain current rating. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS (±20 V maximum gate-source voltage) and the return for the 10 A continuous drain current rating. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS (±20 V maximum gate-source voltage) and the return for the 10 A continuous drain current rating. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet gives a gate-source voltage limit of ±20 V and a gate resistance Rg of 4.0 Ω typical at 1 MHz. |
| 5 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
| 6 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
| 7 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
| 8 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 150 V and a continuous drain current ID of 10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `CJQ10SN15S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjq10sn15s-etched.step` / `cjq10sn15s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjq10sn15s.step` / `cjq10sn15s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920204761853952) (6 pp, sha256 `151a28f2e5d3f5dd`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjq10sn15s-datasheet.pdf)