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CJPF12N65

Public Made by Adom

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Changjing MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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CJPF12N65

Changjing · MOSFETs · TO-220F-3

CJPF12N65 from Changjing, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal, controls the channel with a maximum gate-source voltage of ±30 V and threshold of 2 to 4 V at ID=250µA.
2 DRAIN passive Drain terminal, rated for 650 V drain-source voltage and 12 A continuous drain current.
3 SOURCE passive Source terminal, with a maximum continuous drain-source diode forward current of 12 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 650 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 10 µA VDS =650V, VGS =0V 2
Gate-body leakage current IGSS -100 100 nA VDS =0V, VGS =±30V 2
Gate-threshold voltage VGS(th) 2 3.5 4 V VDS =VGS, ID =250µA 2
Static drain-source on-resistance RDS(on) 0.7 0.85 Ω VGS =10V, ID =6A 2
Total gate charge Qg 42 54 nC VDS =520V, VGS =10V, ID =12A 2
Drain-source diode forward voltage VSD 1.4 V VGS = 0V, IS =12A 2
Maximum continuous drain-source diode forward current IS 12 A 2
Maximum pulsed drain-source diode forward current ISM 48 A 2
Drain-Source Voltage VDS 650 V Ta=25℃ 1
Gate-Source Voltage VGS -30 30 V Ta=25℃ 1
Continuous Drain Current ID 12 A Ta=25℃ 1
Pulsed Drain Current IDM 48 A Ta=25℃ 1
Single Pulsed Avalanche Energy EAS 540 mJ Ta=25℃ 1
Power Dissipation PD 50 W Ta=25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W 1
Thermal Resistance from Junction to Case RθJC 2.5 ℃/W 1
Input capacitance Ciss 1800 pF VDS =25V, VGS =0V, f =1MHz 2
Output capacitance Coss 200 pF VDS =25V, VGS =0V, f =1MHz 2
Reverse transfer capacitance Crss 25 pF VDS =25V, VGS =0V, f =1MHz 2
Gate-source charge Qgs 8.6 nC VDS =520V, VGS =10V, ID =12A 2
Gate-drain charge Qgd 21 nC VDS =520V, VGS =10V, ID =12A 2
Turn-on delay time td(on) 30 ns VDD=325V, VGS=10V, RG=25Ω, ID =12A 2
Turn-on rise time tr 90 ns VDD=325V, VGS=10V, RG=25Ω, ID =12A 2
Turn-off delay time td(off) 160 ns VDD=325V, VGS=10V, RG=25Ω, ID =12A 2
Turn-off fall time tf 90 ns VDD=325V, VGS=10V, RG=25Ω, ID =12A 2

CAD (KiCad official)

  • Symbol: CJPF12N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 acd3d74c6c748838, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF