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CJL6602

Public Made by Adom

by adom

Changjing MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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CJL6602

Changjing · MOSFETs · SOT-23-6L

CJL6602 from Changjing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; gate-source voltage limit is ±12 V.
2 S2 passive Source of MOSFET 2 (pin labelled S2 in the equivalent circuit).
3 G2 input Gate of MOSFET 2; gate-source voltage limit is ±12 V.
4 D2 passive Drain of MOSFET 2; drain-source voltage rating is 30 V (N-channel) or -30 V (P-channel).
5 S1 passive Source of MOSFET 1 (pin labelled S1 in the equivalent circuit).
6 D1 passive Drain of MOSFET 1; drain-source voltage rating is 30 V (N-channel) or -30 V (P-channel).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23-6L
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-source voltage VDS 30 V TA=25℃, N-channel 1
P-ch Drain-source voltage VDS -30 V TA=25℃, P-channel 1
N-ch Gate-source voltage VGS -12 12 V TA=25℃, N-channel, ±12 1
P-ch Gate-source voltage VGS -12 12 V TA=25℃, P-channel, ±12 1
N-ch Continuous drain current ID 3.4 A TA=25℃, N-channel, t≤10s, 1in2 FR-4 1
P-ch Continuous drain current ID -2.3 A TA=25℃, P-channel, t≤10s, 1in2 FR-4 1
N-ch Pulsed drain current IDM 30 A TA=25℃, N-channel 1
P-ch Pulsed drain current IDM -30 A TA=25℃, P-channel 1
Power dissipation PD 0.35 W TA=25℃, both channels 1
Junction and storage temperature range TJ,Tstg -55 150 ℃ -55~+150 1
Thermal resistance junction to ambient RθJA 357 ℃/W 1in2 FR-4, 2oz Cu, still air, TA=25°C 1
N-ch Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID =250µA 2
N-ch Zero gate voltage drain current IDSS 1 µA VDS =24V,VGS = 0V 2
N-ch Gate-source leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
N-ch Drain-source on-resistance RDS(on) 45 60 mΩ VGS =10V, ID =3A 2
N-ch Drain-source on-resistance RDS(on) 50 75 mΩ VGS =4.5V, ID =3A 2
N-ch Drain-source on-resistance RDS(on) 60 115 mΩ VGS =2.5V, ID =2A 2
N-ch Gate threshold voltage VGS(th) 0.6 1.4 V VDS =VGS, ID =250µA 2
N-ch Diode forward voltage VSD 1 V IS=1A,VGS=0V 2
P-ch Drain-source breakdown voltage V(BR)DSS -30 V VGS = 0V, ID =-250µA 2
P-ch Zero gate voltage drain current IDSS -1 µA VDS =-24V,VGS = 0V 2
P-ch Gate-source leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
P-ch Drain-source on-resistance RDS(on) 75 135 mΩ VGS =-10V, ID =-2.3A 2
P-ch Drain-source on-resistance RDS(on) 95 185 mΩ VGS =-4.5V, ID =-2A 2
P-ch Drain-source on-resistance RDS(on) 140 265 mΩ VGS =-2.5V, ID =-1A 2
P-ch Gate threshold voltage VGS(th) -1.4 -0.6 V VDS =VGS, ID =-250µA 2
P-ch Diode forward voltage VDS -1 V IS=-1A,VGS=0V 2
N-ch Forward transconductance gFS 5 S VDS =5V, ID =3A 2
P-ch Forward transconductance gFS 4.5 S VDS =-5V, ID =-2.3A 2
N-ch Input capacitance Ciss 390 pF VGS =0V,VDS =15V ,f =1MHz 2
N-ch Output capacitance Coss 54.5 pF VGS =0V,VDS =15V ,f =1MHz 2
N-ch Reverse transfer capacitance Crss 41 pF VGS =0V,VDS =15V ,f =1MHz 2
N-ch Gate resistance Rg 3 Ω VGS =0V,VDS =0V,f =1MHz 2
P-ch Input capacitance Ciss 409 pF VGS =0V,VDS =-15V,f =1MHz 2
P-ch Output capacitance Coss 55 pF VGS =0V,VDS =-15V,f =1MHz 2
P-ch Reverse transfer capacitance Crss 42 pF VGS =0V,VDS =-15V,f =1MHz 2
P-ch Gate resistance Rg 12 Ω VGS =0V,VDS =0V,f =1MHz 2
N-ch Turn-on delay time td(on) 4 ns VGS=10V,VDS=15V, RL=5Ω,RGEN=6Ω 2
N-ch Turn-on rise time tr 2 ns VGS=10V,VDS=15V, RL=5Ω,RGEN=6Ω 2
N-ch Turn-off delay time td(off) 22 ns VGS=10V,VDS=15V, RL=5Ω,RGEN=6Ω 2
N-ch Turn-off fall time tf 3 ns VGS=10V,VDS=15V, RL=5Ω,RGEN=6Ω 2
P-ch Turn-on delay time td(on) 13 ns VGS=-10V,VDS=-15V, RL=6Ω,RGEN=6Ω 2
P-ch Turn-on rise time tr 10 ns VGS=-10V,VDS=-15V, RL=6Ω,RGEN=6Ω 2
P-ch Turn-off delay time td(off) 28 ns VGS=-10V,VDS=-15V, RL=6Ω,RGEN=6Ω 2
P-ch Turn-off fall time tf 13 ns VGS=-10V,VDS=-15V, RL=6Ω,RGEN=6Ω 2

CAD (KiCad official)

  • Symbol: CJL6602
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: cjl6602-etched.step / cjl6602-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjl6602.step / cjl6602.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 145a50c14133106b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF