component
CJL2016
Public Made by Adomby adom
Changjing MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| cjl2016-etched.glb | 23d ago |
| cjl2016-etched.step | 23d ago |
| cjl2016-hero.glb | 23d ago |
| cjl2016-hero.overlay.json | 23d ago |
| cjl2016.glb | 23d ago |
| cjl2016.kicad_mod | 23d ago |
| cjl2016.kicad_sym | 23d ago |
| cjl2016.lbr | 23d ago |
| cjl2016.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
CJL2016
Changjing · MOSFETs · SOT-23-6L
CJL2016 from Changjing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of N-channel MOSFET 1; gate-source voltage is rated at ±10 V (VGS). |
| 2 | D1,D2 | passive | Common drain connection of both N-channel MOSFETs; drain-source voltage is rated at 20 V (VDS) and continuous drain current at 6 A. |
| 3 | G2 | input | Gate of N-channel MOSFET 2; gate-source voltage is rated at ±10 V (VGS). |
| 4 | S2 | passive | Source of N-channel MOSFET 2. |
| 5 | D1,D2 | passive | Common drain connection of both N-channel MOSFETs; drain-source voltage is rated at 20 V (VDS) and continuous drain current at 6 A. |
| 6 | S1 | passive | Source of N-channel MOSFET 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source on-resistance (VGS=4.5V) | RDS(on) | 15.7 | 20 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Drain-source on-resistance (VGS=2.5V) | RDS(on) | 20 | 27 | mΩ | VGS=2.5V, ID=3A | 2 | |
| Drain-source on-resistance (VGS=3.8V) | RDS(on) | 16.4 | 23 | mΩ | VGS=3.8V, ID=3A | 2 | |
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.45 | 0.7 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=18V, VGS=0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Forward transconductance | gFS | 10 | S | VDS=5V, ID=4.5A | 2 | ||
| Diode forward voltage | VSD | 1.2 | V | IS=1.25A, VGS=0V | 2 | ||
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -10 | 10 | V | 1 | ||
| Continuous drain current | ID | 6 | A | 1 | |||
| Pulsed drain current | IDM | 25 | A | note 1: pulse width limited by maximum junction temperature | 1 | ||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Lead temperature for soldering | TL | 260 | ℃ | 1/8 inch from case for 10 s | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 83.3 | ℃/W | Surface mounted on FR4 board, 1 square inch pad, 1oz single-side copper (note 2) | 1 |
CAD (KiCad official)
- Symbol:
CJL2016 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
cjl2016-etched.step/cjl2016-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjl2016.step/cjl2016.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
b5cf22fa886cf41d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).