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CJK2333

Public Made by Adom

by adom

Changjiang Electronics Tech (CJ) MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJK2333

Changjiang Electronics Tech (CJ) · MOSFETs · SOT-23-3L

CJK2333 from Changjiang Electronics Tech (CJ), in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate control terminal; the gate-source voltage VGS is rated ±8 V.
2 SOURCE passive Source terminal; the drain-source breakdown voltage V(BR)DSS is -12 V.
3 DRAIN passive Drain terminal; continuous drain current ID is -6 A and pulsed drain current IDM is -20 A.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package SOT-23-3L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -6 A 1
Pulsed Drain Current IDM -20 A t=300µs 1
Power Dissipation PD 0.4 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 312.5 ℃/W 1
Drain-source breakdown voltage V(BR)DSS -12 V VGS = 0V, ID =-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS =-12V,VGS = 0V 2
Gate-body leakage current IGSS -0.1 0.1 µA VGS =±8V, VDS = 0V 2
Gate threshold voltage (note 1) VGS(th) -0.4 -1 V VDS =VGS, ID =-250µA 2
Drain-source on-resistance (note 1) RDS(on) 28 mΩ VGS =-4.5V, ID =-5A 2
Drain-source on-resistance (note 1) RDS(on) 32 mΩ VGS =-3.7V, ID =-4.6A 2
Drain-source on-resistance (note 1) RDS(on) 40 mΩ VGS =-2.5V, ID =-4.3A 2
Drain-source on-resistance (note 1) RDS(on) 63 mΩ VGS =-1.8V, ID =-1A 2
Drain-source on-resistance (note 1) RDS(on) 150 mΩ VGS =-1.5V, ID =-0.5A 2
Input Capacitance Ciss 1275 pF VDS =-6V,VGS =0V,f =1MHz 2
Output Capacitance Coss 255 pF VDS =-6V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 236 pF VDS =-6V,VGS =0V,f =1MHz 2
Gate resistance Rg 1.9 19 Ω f =1MHz 2
Total Gate Charge Qg 14 21 nC VDS =-6V,VGS =-4.5V,ID=-5A 2
Gate-Source Charge Qgs 2.3 nC VDS =-6V,VGS =-4.5V,ID=-5A 2
Gate-Drain Charge Qgd 3.6 nC VDS =-6V,VGS =-4.5V,ID=-5A 2
Turn-on delay time td(on) 26 40 ns VDD=-6V,VGEN=-4.5V,ID=-4A,RL=6Ω,RGEN=1Ω 2
Turn-on rise time tr 24 40 ns VDD=-6V,VGEN=-4.5V,ID=-4A,RL=6Ω,RGEN=1Ω 2
Turn-off delay time td(off) 45 70 ns VDD=-6V,VGEN=-4.5V,ID=-4A,RL=6Ω,RGEN=1Ω 2
Turn-off fall time tf 20 35 ns VDD=-6V,VGEN=-4.5V,ID=-4A,RL=6Ω,RGEN=1Ω 2
Diode forward current IS -1.4 A TC=25℃ 2
Diode pulsed forward current ISM -20 A 2
Diode Forward voltage (note 1) VSD -1.2 V VGS =0V, IS=-4A 2
Diode reverse recovery time (note 2) trr 24 48 ns IF=-4A,dI/dt=100A/µs 2
Diode reverse recovery charge (note 2) Qrr 8 16 nC IF=-4A,dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: CJK2333
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: cjk2333-etched.step / cjk2333-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjk2333.step / cjk2333.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256 e2498e7aa1f28037, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF