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Contents

README

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CJE3139K

Changjing · MOSFETs · SOT-523

CJE3139K from Changjing, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the CJE3139K P-channel MOSFET, with a gate-source voltage rating of ±12 V as listed in the maximum ratings.
2 SOURCE passive Source terminal of the P-channel MOSFET, serving as the reference for VGS; the datasheet gives no separate source-pin rating.
3 DRAIN passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V and a continuous drain current of -0.66 A (note 1, surface-mounted on FR4 at minimum recommended pad size).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current (note 1) ID -0.66 A 1
Pulsed Drain Current IDM -1.2 A tp=10μs 1
Power Dissipation (note 1) PD 150 mW note 1: surface mounted on FR4, minimum recommended pad size 1
Thermal Resistance from Junction to Ambient (note 1) RθJA 833 ℃/W note 1: surface mounted on FR4, minimum recommended pad size 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Lead Temperature for Soldering Purposes TL 260 ℃ 1/8" from case for 10 s 1
Drain-source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID = -250µA 2
Zero gate voltage drain current IDSS -1 µA VDS = -20V, VGS = 0V 2
Gate-body leakage current IGSS -20 20 µA VGS = ±10V, VDS = 0V 2
Gate threshold voltage (note 2) VGS(th) -0.35 -1.1 V VDS = VGS, ID = -250µA 2
Drain-source on-resistance (note 2) RDS(on) 520 mΩ VGS = -4.5V, ID = -1A 2
Drain-source on-resistance (note 2) RDS(on) 700 mΩ VGS = -2.5V, ID = -0.8A 2
Drain-source on-resistance (note 2) RDS(on) 950 mΩ VGS = -1.8V, ID = -0.5A 2
Forward transconductance (note 2) gFS 1.2 S VDS = -10V, ID = -0.54A 2
Diode forward voltage VSD -1.2 V IS = -0.5A, VGS = 0V 2
Input capacitance Ciss 113 170 pF VDS = -16V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 15 25 pF VDS = -16V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 9 15 pF VDS = -16V, VGS = 0V, f = 1MHz 2
Turn-on delay time (note 3) td(on) 9 ns VGS = -4.5V, VDS = -10V, ID = -200mA, RGEN = 10Ω 2
Turn-on rise time (note 3) tr 5.8 ns VGS = -4.5V, VDS = -10V, ID = -200mA, RGEN = 10Ω 2
Turn-off delay time (note 3) td(off) 32.7 ns VGS = -4.5V, VDS = -10V, ID = -200mA, RGEN = 10Ω 2
Turn-off fall time (note 3) tf 20.3 ns VGS = -4.5V, VDS = -10V, ID = -200mA, RGEN = 10Ω 2

CAD (KiCad official)

  • Symbol: CJE3139K
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: cje3139k-etched.step / cje3139k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cje3139k.step / cje3139k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 2c1d1d8755b4b4a8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF