CJ4459A

{
  "slug": "cj4459a",
  "version": "0.1.0",
  "type": "component",
  "description": "Changjing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "triode-mos tube-transistor",
    "cj4459a",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
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    "README.md",
    "cj4459a.kicad_sym",
    "cj4459a.kicad_mod",
    "cj4459a.glb",
    "cj4459a.step",
    "cj4459a.lbr",
    "docs/hero.png",
    "docs/cj4459a-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "cj4459a-hero.glb",
    "cj4459a-hero.overlay.json",
    "cj4459a-etched.glb"
  ],
  "component": {
    "mpn": "CJ4459A",
    "manufacturer": "Changjing",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/6ca2b545f70b4a599676412372eba410.pdf",
    "parts": {
      "symbol": "cj4459a.kicad_sym",
      "footprint": "cj4459a.kicad_mod",
      "model_3d": "cj4459a-hero.glb",
      "model_3d_plain": "cj4459a-etched.glb",
      "model_3d_step": "cj4459a-etched.step",
      "model_3d_step_plain": "cj4459a.step",
      "lbr": "cj4459a.lbr"
    },
    "distributor_links": {
      "lcsc": "C5441190"
    },
    "distributor_check": {
      "checked_at": "2026-10-22T18:27:29Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "GATE",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, with maximum gate-source voltage of ±20 V and gate threshold voltage of -1.0 to -2.5 V."
      },
      {
        "number": "2",
        "name": "SOURCE",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, with continuous source (body diode) current of -5 A and pulsed -30 A."
      },
      {
        "number": "3",
        "name": "DRAIN",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, rated for drain-source voltage of -30 V and continuous drain current of -5 A (RDS(on) max 46 mΩ at -10 V)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [],
        "pages_sent": 7,
        "cost_usd": 0.0456,
        "at": "2026-10-22T18:27:12"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/6ca2b545f70b4a599676412372eba410.pdf",
        "pages": 7,
        "sha256": "2de229d3cc861b79",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
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        "units": "mm",
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        "zmin_mm": 0.0,
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        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-22",
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      },
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  }
}