component
CJ4459A
Public Made by Adomby adom
Changjing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJ4459A
Changjing · MOSFETs · SOT-23
CJ4459A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the P-channel MOSFET, with maximum gate-source voltage of ±20 V and gate threshold voltage of -1.0 to -2.5 V. |
| 2 | SOURCE | passive | Source of the P-channel MOSFET, with continuous source (body diode) current of -5 A and pulsed -30 A. |
| 3 | DRAIN | passive | Drain of the P-channel MOSFET, rated for drain-source voltage of -30 V and continuous drain current of -5 A (RDS(on) max 46 mΩ at -10 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID =-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS =-30V, VGS =0V, TJ=25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | -100 | µA | VDS =-30V, VGS =0V, TJ=125℃ | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate-threshold voltage | VGS(th) | -2.5 | -1.6 | -1 | V | VDS =VGS, ID =-250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | 37 | 46 | mΩ | VGS =-10V, ID =-5A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 44 | 57 | mΩ | VGS =-4.5V, ID =-5A | 2 | |
| Drain-source diode forward voltage | VSD | -1 | V | VGS =0V, IS=-1A | 2 | ||
| Continuous drain-source diode forward current | IS | -5 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | -30 | A | 2 | |||
| Drain-Source Voltage | VDS | -30 | V | TJ=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TJ=25℃ | 1 | |
| Continuous Drain Current | ID | -5 | A | TJ=25℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | TJ=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Input capacitance | Ciss | 683 | pF | VDS =-15V,VGS =0V, f =1MHz | 2 | ||
| Output capacitance | Coss | 97 | pF | VDS =-15V,VGS =0V, f =1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 54.6 | pF | VDS =-15V,VGS =0V, f =1MHz | 2 | ||
| Gate resistance | Rg | 14 | Ω | f =1MHz | 2 | ||
| Forward transconductance | gFS | 6.5 | S | VDS =-5V, ID =-5A | 2 |
CAD (KiCad official)
- Symbol:
CJ4459A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
cj4459a-etched.step/cj4459a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj4459a.step/cj4459a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (7 pp, sha256
2de229d3cc861b79, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJ4459A
**Changjing** · MOSFETs · SOT-23
CJ4459A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the P-channel MOSFET, with maximum gate-source voltage of ±20 V and gate threshold voltage of -1.0 to -2.5 V. |
| 2 | SOURCE | passive | Source of the P-channel MOSFET, with continuous source (body diode) current of -5 A and pulsed -30 A. |
| 3 | DRAIN | passive | Drain of the P-channel MOSFET, rated for drain-source voltage of -30 V and continuous drain current of -5 A (RDS(on) max 46 mΩ at -10 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS = 0V, ID =-250µA | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS =-30V, VGS =0V, TJ=25℃ | 2 |
| Zero gate voltage drain current | IDSS | | | -100 | µA | VDS =-30V, VGS =0V, TJ=125℃ | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate-threshold voltage | VGS(th) | -2.5 | -1.6 | -1 | V | VDS =VGS, ID =-250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | | 37 | 46 | mΩ | VGS =-10V, ID =-5A | 2 |
| Static drain-source on-state resistance | RDS(on) | | 44 | 57 | mΩ | VGS =-4.5V, ID =-5A | 2 |
| Drain-source diode forward voltage | VSD | | | -1 | V | VGS =0V, IS=-1A | 2 |
| Continuous drain-source diode forward current | IS | | | -5 | A | | 2 |
| Pulsed drain-source diode forward current | ISM | | | -30 | A | | 2 |
| Drain-Source Voltage | VDS | | | -30 | V | TJ=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TJ=25℃ | 1 |
| Continuous Drain Current | ID | | | -5 | A | TJ=25℃ | 1 |
| Pulsed Drain Current | IDM | | | -30 | A | TJ=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Input capacitance | Ciss | | 683 | | pF | VDS =-15V,VGS =0V, f =1MHz | 2 |
| Output capacitance | Coss | | 97 | | pF | VDS =-15V,VGS =0V, f =1MHz | 2 |
| Reverse transfer capacitance | Crss | | 54.6 | | pF | VDS =-15V,VGS =0V, f =1MHz | 2 |
| Gate resistance | Rg | | 14 | | Ω | f =1MHz | 2 |
| Forward transconductance | gFS | | 6.5 | | S | VDS =-5V, ID =-5A | 2 |
## CAD (KiCad official)
- Symbol: `CJ4459A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `cj4459a-etched.step` / `cj4459a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cj4459a.step` / `cj4459a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/cj4459a-datasheet.pdf) (7 pp, sha256 `2de229d3cc861b79`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cj4459a-datasheet.pdf)