component
CJ4153
Public Made by Adomby adom
Changjing MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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cj4153: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -21,6 +21,28 @@ CJ4153 from Changjing, in a SOT-523. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 20 | V | Ta=25℃ | 1 |+| Gate-Source Voltage | VGS | -6 | | 6 | V | Ta=25℃ | 1 |+| Continuous Drain Current | ID | | | 0.915 | A | note 1: surface mounted on FR4 board, 1 in sq pad size | 1 |+| Power Dissipation | PD | | | 150 | mW | note 1: surface mounted on FR4 board, 1 in sq pad size | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 833 | ℃/W | note 1: surface mounted on FR4 board, 1 in sq pad size | 1 |+| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =250µA | 2 |+| Gate-source leakage | IGSS | -1 | | 1 | µA | VDS =0V, VGS =±4.5V | 2 |+| Zero gate voltage drain current | IDSS | | | 100 | nA | VDS =16V, VGS =0V | 2 |+| Gate-source threshold voltage | VGS(th) | 0.45 | | 1.1 | V | VDS =VGS, ID =250µA | 2 |+| Drain-source on-state resistance | RDS(on) | | | 570 | mΩ | VGS =4.5V, ID =600mA | 2 |+| Drain-source on-state resistance | RDS(on) | | | 620 | mΩ | VGS =2.5V, ID =500mA | 2 |+| Drain-source on-state resistance | RDS(on) | | | 700 | mΩ | VGS =1.8V, ID =350mA | 2 |+| Drain-source on-state resistance | RDS(on) | | | 9500 | mΩ | VGS =1.5V, ID =40mA | 2 |+ ## CAD (KiCad official) - Symbol: `CJ4153`
page.json+188−1@@ -147,6 +147,193 @@ "Package": "SOT-523", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "10b073a95abcb244",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -6,+ "typ": null,+ "max": 6,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.915,+ "conditions": "note 1: surface mounted on FR4 board, 1 in sq pad size",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "note 1: surface mounted on FR4 board, 1 in sq pad size",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 833,+ "conditions": "note 1: surface mounted on FR4 board, 1 in sq pad size",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": 1,+ "conditions": "VDS =0V, VGS =±4.5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS =16V, VGS =0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.45,+ "typ": null,+ "max": 1.1,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 570,+ "conditions": "VGS =4.5V, ID =600mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 620,+ "conditions": "VGS =2.5V, ID =500mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 700,+ "conditions": "VGS =1.8V, ID =350mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 9500,+ "conditions": "VGS =1.5V, ID =40mA",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +375,4 @@ "visibility": { "public": true }-}+}