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Ray Publish 0.1.0 3c08499 17d ago

CJ3139KDW

Changjing · MOSFETs · SOT-363

CJ3139KDW from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (P-channel); VDSS -20V, continuous drain current -0.66A.
2 G1 input Gate of MOSFET 1; VGS max ±12V, threshold VGS(th) -0.35V min to -1.1V max at ID=-250µA.
3 D2 passive Drain of MOSFET 2 (P-channel); VDSS -20V, pulsed drain current -2.64A.
4 S2 passive Source of MOSFET 2 (P-channel); VDSS -20V, continuous drain current -0.66A.
5 G2 input Gate of MOSFET 2; VGS max ±12V, threshold VGS(th) -0.35V min to -1.1V max at ID=-250µA.
6 D1 passive Drain of MOSFET 1 (P-channel); VDSS -20V, pulsed drain current -2.64A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS -20 V Ta=25℃ 1
Gate-Source voltage VGS -12 12 V Ta=25℃ 1
Drain Current-Continuous ID(DC) -0.66 A Ta=25℃ 1
Drain Current-Pulsed (note 1) IDM(pulse) -2.64 A Ta=25℃ 1
Power Dissipation (note 2) PD 150 mW Ta=25℃ 1
Storage Temperature (as labelled on datasheet) Tj 150 ℃ 1
Junction Temperature (as labelled on datasheet) Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 833 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0V, ID =-250µA 2
Gate-Threshold Voltage (note 3) VGS(th) -0.35 -0.45 -1.1 V VDS =VGS, ID =-250µA 2
Gate-Body Leakage Current IGSS -20 20 µA VDS =0V, VGS =±10V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS =-20V, VGS =0V 2
Drain-Source On-State Resistance (note 3) RDS(on) 430 520 mΩ VGS =-4.5V, ID =-1A 2
Drain-Source On-State Resistance (note 3) RDS(on) 624 700 mΩ VGS =-2.5V, ID =-800mA 2
Drain-Source On-State Resistance (note 3) RDS(on) 950 mΩ VGS =-1.8V, ID =-500mA 2
Drain-Source Diode Forward Voltage (note 3) VSD -1.2 V IS=-0.5A, VGS = 0V 2
Forward Transconductance gFS 0.8 S VDS =-10V, ID =-540mA 2
Input Capacitance Ciss 170 pF VDS =-16V,VGS =0V,f =1MHz 2
Output Capacitance Coss 25 pF VDS =-16V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 15 pF VDS =-16V,VGS =0V,f =1MHz 2
Turn-On Delay Time td(on) 9 ns VDD=-10V, ID=-200mA, VGS=-4.5V, RG=10Ω 2
Rise Time tr 5.8 ns VDD=-10V, ID=-200mA, VGS=-4.5V, RG=10Ω 2
Turn-Off Delay Time td(off) 32.7 ns VDD=-10V, ID=-200mA, VGS=-4.5V, RG=10Ω 2
Fall Time tf 20.3 ns VDD=-10V, ID=-200mA, VGS=-4.5V, RG=10Ω 2

CAD (KiCad official)

  • Symbol: CJ3139KDW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: cj3139kdw-etched.step / cj3139kdw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj3139kdw.step / cj3139kdw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 caf6090260280611, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF