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CJ3134KW
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Changjing MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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cj3134kw: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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CJ3134KW
Changjing · MOSFETs · SOT-323
CJ3134KW from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | MOSFET gate terminal; the datasheet gives a typical gate-source voltage VGS of ±12 V. |
| 2 | SOURCE | passive | MOSFET source terminal; the datasheet states no pin-specific limit, only device ratings of 20 V VDSS and 0.75 A continuous drain current. |
| 3 | DRAIN | passive | MOSFET drain terminal; the device is rated 20 V drain-source voltage (VDSS), 0.75 A continuous drain current and 3 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V | 1 | |||
| Typical Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 0.75 | A | 1 | |||
| Drain Current-Pulsed | IDM | 3 | A | 1 | |||
| Power Dissipation | PD | 200 | mW | No heat sink, Ta=25℃ (note 2) | 1 | ||
| Storage Temperature (as printed) | Tj | 150 | ℃ | 1 | |||
| Junction Temperature (as printed) | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 625 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 0.35 | 1.1 | V | VDS =VGS, ID =250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -20 | 20 | µA | VDS =0V, VGS =±10V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS =20V, VGS =0V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 380 | mΩ | VGS =4.5V, ID =650mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 450 | mΩ | VGS =2.5V, ID =550mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 800 | mΩ | VGS =1.8V, ID =450mA | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | IS=0.15A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 1 | S | VDS =10V, ID =800mA | 2 | ||
| Input Capacitance | Ciss | 120 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | ||
| Output Capacitance | Coss | 20 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 6.7 | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 | ||
| Rise Time | tr | 4.8 | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 17.3 | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 | ||
| Fall Time | tf | 7.4 | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 |
CAD (KiCad official)
- Symbol:
CJ3134KW - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
cj3134kw-etched.step/cj3134kw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj3134kw.step/cj3134kw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
755185fffc4b5f28, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJ3134KW
**Changjing** · MOSFETs · SOT-323
CJ3134KW from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | MOSFET gate terminal; the datasheet gives a typical gate-source voltage VGS of ±12 V. |
| 2 | SOURCE | passive | MOSFET source terminal; the datasheet states no pin-specific limit, only device ratings of 20 V VDSS and 0.75 A continuous drain current. |
| 3 | DRAIN | passive | MOSFET drain terminal; the device is rated 20 V drain-source voltage (VDSS), 0.75 A continuous drain current and 3 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | | | 20 | V | | 1 |
| Typical Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current-Continuous | ID | | | 0.75 | A | | 1 |
| Drain Current-Pulsed | IDM | | | 3 | A | | 1 |
| Power Dissipation | PD | | | 200 | mW | No heat sink, Ta=25℃ (note 2) | 1 |
| Storage Temperature (as printed) | Tj | | | 150 | ℃ | | 1 |
| Junction Temperature (as printed) | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 625 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =250µA | 2 |
| Gate-Threshold Voltage | VGS(th) | 0.35 | | 1.1 | V | VDS =VGS, ID =250µA | 2 |
| Gate-Body Leakage Current | IGSS | -20 | | 20 | µA | VDS =0V, VGS =±10V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS =20V, VGS =0V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 380 | mΩ | VGS =4.5V, ID =650mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 450 | mΩ | VGS =2.5V, ID =550mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 800 | mΩ | VGS =1.8V, ID =450mA | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.2 | V | IS=0.15A, VGS = 0V | 2 |
| Forward Transconductance | gFS | | 1 | | S | VDS =10V, ID =800mA | 2 |
| Input Capacitance | Ciss | | 120 | | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
| Output Capacitance | Coss | | 20 | | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 15 | | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
| Turn-On Delay Time | td(on) | | 6.7 | | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 |
| Rise Time | tr | | 4.8 | | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 |
| Turn-Off Delay Time | td(off) | | 17.3 | | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 |
| Fall Time | tf | | 7.4 | | ns | VDD=10V,ID=500mA, VGS=4.5V,RG=10Ω | 2 |
## CAD (KiCad official)
- Symbol: `CJ3134KW`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `cj3134kw-etched.step` / `cj3134kw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cj3134kw.step` / `cj3134kw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202878763536384) (5 pp, sha256 `755185fffc4b5f28`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cj3134kw-datasheet.pdf)