component
CJ3134KDW
Public Made by Adomby adom
Changjing MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCJ3134KDW
Changjing · MOSFETs · SOT-363
CJ3134KDW from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS max 20 V, ID 0.75 A). |
| 2 | G1 | input | Gate of MOSFET 1; VGS max ±12 V, threshold 0.35 to 1.1 V at ID=250µA. |
| 3 | D2 | passive | Drain of MOSFET 2 (N-channel, VDS max 20 V, ID 0.75 A). |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel, VDS max 20 V, ID 0.75 A). |
| 5 | G2 | input | Gate of MOSFET 2; VGS max ±12 V, threshold 0.35 to 1.1 V at ID=250µA. |
| 6 | D1 | passive | Drain of MOSFET 1 (N-channel, VDS max 20 V, ID 0.75 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | 0.75 | A | t ≤10s | 1 | ||
| Power dissipation | PD | 0.15 | W | Repetitive rating: pulse width limited by junction temperature | 1 | ||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 833 | ℃/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =20V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -20 | 20 | µA | VGS =±10V, VDS = 0V | 2 | |
| Gate threshold voltage (note 1) | VGS(th) | 0.35 | 0.54 | 1.1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance (note 1) | RDS(on) | 270 | 380 | mΩ | VGS =4.5V, ID =0.65A | 2 | |
| Drain-source on-resistance (note 1) | RDS(on) | 320 | 450 | mΩ | VGS =2.5V, ID =0.55A | 2 | |
| Drain-source on-resistance (note 1) | RDS(on) | 390 | 800 | mΩ | VGS =1.8V, ID =0.45A | 2 | |
| Diode forward voltage (note 1) | VSD | 1.2 | V | IS=0.15A, VGS = 0V | 2 | ||
| Input Capacitance | Ciss | 79 | 120 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | |
| Output Capacitance | Coss | 13 | 20 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 9 | 15 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
CAD (KiCad official)
- Symbol:
CJ3134KDW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
cj3134kdw-etched.step/cj3134kdw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj3134kdw.step/cj3134kdw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
56c1892ace7995e2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).