component

CJ3134K

Public Made by Adom

by adom

Changjing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 1mo ago
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cj3134k-etched.glb cj3134k: factory component page (tier=lcsc) · Ray 1mo ago
cj3134k-etched.step cj3134k: factory component page (tier=lcsc) · Ray 1mo ago
cj3134k-hero.glb cj3134k: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
cj3134k-hero.overlay.json Publish 0.1.0 · Ray 1mo ago
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cj3134k.step Publish 0.1.0 · Ray 1mo ago
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page.json cj3134k: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 25d ago
README.md cj3134k: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 25d ago

CJ3134K

Changjing · MOSFETs · SOT-23

CJ3134K from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, with a typical gate-source voltage rating of ±12 V and a gate threshold voltage VGS(th) of 0.35 to 1.1 V at ID = 250 µA.
2 SOURCE passive Source terminal, the reference for the ±12 V gate-source rating and the body diode forward voltage VSD of 1.2 V at IS = 0.15 A.
3 DRAIN passive Drain terminal, rated for a drain-source voltage of 20 V, continuous drain current of 0.75 A and pulsed drain current of 1.8 A (tp = 10 µs).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage (printed as 'Typical Gate-Source Voltage') VGS -12 12 V 1
Continuous Drain Current ID 0.75 A note 1 1
Pulsed Drain Current IDM 1.8 A tp=10μs 1
Power Dissipation PD 350 mW note 1 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W note 1 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Lead Temperature for Soldering Purposes TL 260 ℃ 1/8" duration for 10 s 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =20V,VGS = 0V 2
Gate-body leakage current IGSS -20 20 µA VGS =±10V, VDS = 0V 2
Gate threshold voltage (note 2) VGS(th) 0.35 0.54 1.1 V VDS =VGS, ID =250µA 2
Drain-source on-resistance (note 2), VGS=4.5V RDS(on) 270 380 mΩ VGS =4.5V, ID =0.65A 2
Drain-source on-resistance (note 2), VGS=2.5V RDS(on) 320 450 mΩ VGS =2.5V, ID =0.55A 2
Drain-source on-resistance (note 2), VGS=1.8V RDS(on) 390 800 mΩ VGS =1.8V, ID =0.45A 2
Input capacitance Ciss 79 120 pF VDS =16V,VGS =0V,f =1MHz 2
Output capacitance Coss 13 20 pF VDS =16V,VGS =0V,f =1MHz 2
Reverse transfer capacitance Crss 9 15 pF VDS =16V,VGS =0V,f =1MHz 2

CAD (KiCad official)

  • Symbol: CJ3134K
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cj3134k-etched.step / cj3134k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj3134k.step / cj3134k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 01a5c6a01a89b19c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF