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Contents

README

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CJ2333

Changjing · MOSFETs · SOT-23

CJ2333 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the MOSFET, rated for a gate-source voltage VGS of ±8 V per the absolute maximum ratings.
2 SOURCE passive Source terminal; the datasheet rates the source-drain diode forward current IS at -1.4 A (TC=25℃) and the pulsed diode current ISM at -20 A.
3 DRAIN passive Drain terminal, rated for a drain-source voltage VDS of -12 V and a continuous drain current ID of -6 A (pulsed IDM of -20 A, t=300µs).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -6 A 1
Pulsed Drain Current IDM -20 A t=300µs 1
Power Dissipation PD 0.35 W Device mounted on no heat sink (note b) 1
Power Dissipation PD 1.1 W Device mounted on FR-4 substrate board, minimum recommended pad layout, single side (note a) 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Device mounted on no heat sink (note b) 1
Thermal Resistance from Junction to Ambient RθJA 113 ℃/W Device mounted on FR-4 substrate board, minimum recommended pad layout, single side (note a) 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS -12 V VGS = 0V, ID =-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS =-12V,VGS = 0V 2
Gate-body leakage current IGSS -0.1 0.1 µA VGS =±8V, VDS = 0V 2
Gate threshold voltage VGS(th) -1 -0.4 V VDS =VGS, ID =-250µA 2
Drain-source on-resistance RDS(on) 28 mΩ VGS =-4.5V, ID =-5A 2
Drain-source on-resistance RDS(on) 32 mΩ VGS =-3.7V, ID =-4.6A 2
Drain-source on-resistance RDS(on) 40 mΩ VGS =-2.5V, ID =-4.3A 2
Drain-source on-resistance RDS(on) 63 mΩ VGS =-1.8V, ID =-1A 2
Drain-source on-resistance RDS(on) 150 mΩ VGS =-1.5V, ID =-0.5A 2
Gate resistance Rg 1.9 19 Ω f =1MHz 2
Total Gate Charge Qg 14 21 nC VDS =-6V,VGS =-4.5V,ID=-5A 2
Turn-on delay time td(on) 26 40 ns VDD=-6V,VGEN=-4.5V,ID=-4A, RL=6Ω,RGEN=1Ω (shared block printed above tf) 2
Turn-on rise time tr 24 40 ns VDD=-6V,VGEN=-4.5V,ID=-4A, RL=6Ω,RGEN=1Ω (shared block printed above tf) 2
Turn-off delay time td(off) 45 70 ns VDD=-6V,VGEN=-4.5V,ID=-4A, RL=6Ω,RGEN=1Ω (shared block printed above tf) 2
Turn-off fall time tf 20 35 ns VDD=-6V,VGEN=-4.5V,ID=-4A, RL=6Ω,RGEN=1Ω 2
Diode reverse recovery time trr 24 48 ns IF=-4A,dI/dt=100A/µs (shared block printed above Qrr) 2
Diode reverse recovery charge Qrr 8 16 nC IF=-4A,dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: CJ2333
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cj2333-etched.step / cj2333-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj2333.step / cj2333.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 d4bf07c781ba4d73, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF