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CJ2321A

Public Made by Adom

by adom

Changjing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJ2321A

Changjing · MOSFETs · SOT-23

CJ2321A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET; gate-source voltage limited to ±12 V with threshold of -0.4 to -1.0 V.
2 SOURCE passive Source terminal of the P-channel MOSFET; continuous source-drain diode current is limited to -0.59 A.
3 DRAIN passive Drain terminal of the P-channel MOSFET; drain-source voltage rated -20 V and continuous drain current -2.9 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID = -10µA 2
Gate-source leakage IGSS -100 100 nA VDS = 0V, VGS = ±12V 2
Zero gate voltage drain current IDSS -1 µA VDS = -16V, VGS = 0V 2
Gate-source threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250µA 2
Drain-source on-state resistance RDS(on) 0.04 0.057 Ω VGS = -4.5V, ID = -3.3A 2
Drain-source on-state resistance RDS(on) 0.055 0.076 Ω VGS = -2.5V, ID = -2.8A 2
Drain-source on-state resistance RDS(on) 0.095 0.12 Ω VGS = -1.8V, ID = -2.3A 2
Forward diode voltage VSD -1.2 V VGS = 0V, IS = -1.6A 2
Drain-Source Voltage VDS -20 V Ta=25℃ 1
Gate-Source Voltage VGS -12 12 V Ta=25℃ 1
Continuous Drain Current ID -2.9 A Ta=25℃ 1
Pulsed Drain Current IDM -12 A Ta=25℃ 1
Continuous Source-Drain Diode Current IS -0.59 A Ta=25℃ 1
Maximum Power Dissipation PD 0.35 W Ta=25℃ 1
Operation Junction and Storage Temperature Range TJ,Tstg -50 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W 1
Forward transconductance gfS 3 S VDS = -5V, ID = -3.3A 2
Input capacitance Ciss 715 pF VDS = -6V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 170 pF VDS = -6V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 120 pF VDS = -6V, VGS = 0V, f = 1MHz 2
Total gate charge Qg 13 nc VDS = -6V, VGS = -4.5V, ID = -3.3A 2
Gate-source charge Qgs 1.2 nc VDS = -6V, VGS = -4.5V, ID = -3.3A 2
Gate-drain charge Qgd 2.2 nc VDS = -6V, VGS = -4.5V, ID = -3.3A 2
Turn-on delay time td(on) 25 ns VGEN=-4.5V, VDD=-6V, ID=-1.0A, RG=6Ω, RL=6Ω 2
Rise time tr 55 ns VGEN=-4.5V, VDD=-6V, ID=-1.0A, RG=6Ω, RL=6Ω 2
Turn-off delay time td(off) 90 ns VGEN=-4.5V, VDD=-6V, ID=-1.0A, RG=6Ω, RL=6Ω 2
Fall time tf 60 ns VGEN=-4.5V, VDD=-6V, ID=-1.0A, RG=6Ω, RL=6Ω 2

CAD (KiCad official)

  • Symbol: CJ2321A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cj2321a-etched.step / cj2321a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj2321a.step / cj2321a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 8602e0baa14e5da9, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF