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CJ2306
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Changjiang Electronics Tech (CJ) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJ2306
Changjiang Electronics Tech (CJ) · MOSFETs · SOT-23
CJ2306 from Changjiang Electronics Tech (CJ), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the device gate-source voltage is rated VGS ±20 V. |
| 2 | SOURCE | passive | Source terminal of the MOSFET; the device source current (diode conduction) is rated IS 0.62 A maximum. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET; the device drain-source voltage is rated VDS 30 V, with continuous drain current ID 3.16 A (TJ=150℃) and pulsed drain current IDM 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3.16 | A | TJ=150℃ | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 0.62 | A | Diode Conduction | 1 | ||
| Maximum Power Dissipation | PD | 0.75 | W | Surface Mounted on 1” ×1” FR4 board, t≤5s | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 100 | ℃/W | t≤5s | 1 | ||
| Gate-Threshold Voltage | VGS(th) | 1 | 3 | V | VDS =VGS, ID =250µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.038 | 0.047 | Ω | VGS =10V, ID =3.5A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.052 | 0.065 | Ω | VGS =4.5V, ID =2.8A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS=1.25A,VGS=0V | 2 | |
| Gate Charge | Qg | 3 | 4.5 | nC | VDS =15V,VGS =5V,ID =2.5A | 2 | |
| Total Gate Charge | Qgt | 6 | 9 | nC | 2 | ||
| Gate Resistance | Rg | 2.5 | 5 | 7.5 | Ω | f =1.0MHz | 2 |
| Turn-On Delay Time | td(on) | 7 | 11 | ns | 2 | ||
| Rise Time | tr | 12 | 18 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 14 | 25 | ns | 2 | ||
| Fall Time | tf | 6 | 10 | ns | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω | 2 | |
| Drain-Source Breakdown Voltage | V(BR)DS | 30 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.5 | µA | VDS =30V, VGS =0V | 2 | ||
| Forward Transconductance | gfs | 7 | S | VDS =4.5V, ID =2.5A | 2 |
CAD (KiCad official)
- Symbol:
CJ2306 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
cj2306-etched.step/cj2306-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj2306.step/cj2306.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (2 pp, sha256
070ea829b0ce7a03, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJ2306
**Changjiang Electronics Tech (CJ)** · MOSFETs · SOT-23
CJ2306 from Changjiang Electronics Tech (CJ), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the device gate-source voltage is rated VGS ±20 V. |
| 2 | SOURCE | passive | Source terminal of the MOSFET; the device source current (diode conduction) is rated IS 0.62 A maximum. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET; the device drain-source voltage is rated VDS 30 V, with continuous drain current ID 3.16 A (TJ=150℃) and pulsed drain current IDM 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3.16 | A | TJ=150℃ | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 0.62 | A | Diode Conduction | 1 |
| Maximum Power Dissipation | PD | | | 0.75 | W | Surface Mounted on 1” ×1” FR4 board, t≤5s | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | t≤5s | 1 |
| Gate-Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS =VGS, ID =250µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Drain-Source On-Resistance | RDS(on) | | 0.038 | 0.047 | Ω | VGS =10V, ID =3.5A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 0.052 | 0.065 | Ω | VGS =4.5V, ID =2.8A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS=1.25A,VGS=0V | 2 |
| Gate Charge | Qg | | 3 | 4.5 | nC | VDS =15V,VGS =5V,ID =2.5A | 2 |
| Total Gate Charge | Qgt | | 6 | 9 | nC | | 2 |
| Gate Resistance | Rg | 2.5 | 5 | 7.5 | Ω | f =1.0MHz | 2 |
| Turn-On Delay Time | td(on) | | 7 | 11 | ns | | 2 |
| Rise Time | tr | | 12 | 18 | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 14 | 25 | ns | | 2 |
| Fall Time | tf | | 6 | 10 | ns | VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω | 2 |
| Drain-Source Breakdown Voltage | V(BR)DS | 30 | | | V | VGS = 0V, ID =250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 0.5 | µA | VDS =30V, VGS =0V | 2 |
| Forward Transconductance | gfs | 7 | | | S | VDS =4.5V, ID =2.5A | 2 |
## CAD (KiCad official)
- Symbol: `CJ2306`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `cj2306-etched.step` / `cj2306-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cj2306.step` / `cj2306.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/cj2306-datasheet.pdf) (2 pp, sha256 `070ea829b0ce7a03`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cj2306-datasheet.pdf)