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CJ2305A

Public Made by Adom

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Changjing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJ2305A

Changjing · MOSFETs · SOT-23

CJ2305A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal; the gate-source voltage VGS is rated ±8 V, and the gate-source threshold VGS(th) is -0.5 V to -1 V at ID = -250 µA.
2 SOURCE passive Source terminal; the continuous source-drain diode current IS is rated -0.8 A in the maximum ratings table.
3 DRAIN passive Drain terminal; the drain-source voltage VDS is rated -12 V and the continuous drain current ID is rated -4.1 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -4.1 A 1
Continuous Source-Drain Diode Current IS -0.8 A 1
Maximum Power Dissipation PD 1.3 W Device mounted on 1"×1" FR-4 PCB, 2oz Cu, t≤10s 1
Thermal Resistance from Junction to Ambient RθJA 96.2 ℃/W Device mounted on 1"×1" FR-4 PCB, 2oz Cu, t≤10s 1
Operation Junction and Storage Temperature Range TJ,TSTG -50 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS -12 V VGS = 0V, ID = -250µA 2
Gate-source threshold voltage VGS(th) -0.5 -1 V VDS = VGS, ID = -250µA 2
Gate-source leakage IGSS -100 100 nA VDS = 0V, VGS = ±8V 2
Zero gate voltage drain current IDSS -1 µA VDS = -8V, VGS = 0V 2
Drain-source on-state resistance RDS(on) 40 50 mΩ VGS = -4.5V, ID = -3.5A 2
Drain-source on-state resistance RDS(on) 55 65 mΩ VGS = -2.5V, ID = -3A 2
Drain-source on-state resistance RDS(on) 90 120 mΩ VGS = -1.8V, ID = -2.0A 2
Total gate charge Qg 7.8 15 nC VDS = -4V, VGS = -4.5V, ID = -4.1A 2
Total gate charge Qg 4.5 9 nC VDS = -4V, VGS = -2.5V, ID = -4.1A 2
Gate resistance Rg 1.4 7 14 Ω f = 1MHz 2
Turn-on delay time td(on) 13 20 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω 2
Rise time tr 35 53 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω 2
Turn-off delay time td(off) 32 48 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω 2
Fall time tf 10 20 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω 2
Turn-on delay time td(on) 5 10 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω 2
Rise time tr 11 17 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω 2
Turn-off delay time td(off) 22 33 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω 2
Fall time tf 16 24 ns VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω 2
Continuous source-drain diode current IS -1.4 A TC = 25℃ 2
Pulse diode forward current ISM -10 A 2
Body diode voltage VSD -1.2 V IF = -3.3A 2

CAD (KiCad official)

  • Symbol: CJ2305A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cj2305a-etched.step / cj2305a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj2305a.step / cj2305a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 0ea10f1d4cccf55d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF