component
CJ2045
Public Made by Adomby adom
Changjing Bipolar Transistors - BJT, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| cj2045-etched.glb | 13d ago |
| cj2045-etched.step | 13d ago |
| cj2045-hero.glb | 13d ago |
| cj2045-hero.overlay.json | 13d ago |
| cj2045.glb | 13d ago |
| cj2045.kicad_mod | 13d ago |
| cj2045.kicad_sym | 13d ago |
| cj2045.lbr | 13d ago |
| cj2045.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
CJ2045
Changjing · Bipolar Transistors - BJT · SOT-23-6L
CJ2045 from Changjing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C1 | passive | Tr1 NPN collector, rated 40V VCBO, 30V VCEO and 1.5A continuous (5A peak). |
| 2 | B1 | passive | Tr1 NPN base, with emitter-base voltage limited to 7V. |
| 3 | C2 | passive | Tr2 PNP collector, rated -40V VCBO, -30V VCEO and -1.5A continuous (-5A peak). |
| 4 | E2 | passive | Tr2 PNP emitter, with emitter-base voltage limited to -7V. |
| 5 | B2 | passive | Tr2 PNP base, with emitter-base voltage limited to -7V. |
| 6 | E1 | passive | Tr1 NPN emitter, with emitter-base voltage limited to 7V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23-6L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (NPN Tr1) | VCBO | 40 | V | Ta=25℃ | 1 | ||
| Collector-base voltage (PNP Tr2) | VCBO | -40 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage (NPN Tr1) | VCEX | 40 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage (PNP Tr2) | VCEX | -40 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage (NPN Tr1) | VCEO | 30 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage (PNP Tr2) | VCEO | -30 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage (NPN Tr1) | VEBO | 7 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage (PNP Tr2) | VEBO | -7 | V | Ta=25℃ | 1 | ||
| Collector current continuous (NPN Tr1) | IC | 1.5 | A | Ta=25℃ | 1 | ||
| Collector current continuous (PNP Tr2) | IC | -1.5 | A | Ta=25℃ | 1 | ||
| Collector current peak (NPN Tr1) | ICM | 5 | A | Ta=25℃ | 1 | ||
| Collector current peak (PNP Tr2) | ICM | -5 | A | Ta=25℃ | 1 | ||
| Collector power dissipation (NPN Tr1) | PC | 350 | mW | Ta=25℃ | 1 | ||
| Collector power dissipation (PNP Tr2) | PC | 350 | mW | Ta=25℃ | 1 | ||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction to ambient (NPN Tr1) | RθJA | 357 | ℃/W | Ta=25℃ | 1 | ||
| Thermal resistance junction to ambient (PNP Tr2) | RθJA | 357 | ℃/W | Ta=25℃ | 1 | ||
| Collector-base breakdown voltage (NPN Tr1) | V(BR)CBO | 40 | V | IC=100μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage (NPN Tr1) | V(BR)CEO | 30 | V | IC=10mA, IB=0; pulse width≤300µs, duty cycle≤2% | 2 | ||
| Collector-emitter breakdown voltage (NPN Tr1) | V(BR)CEX | 40 | V | IC=1μA, VBE(off)=-0.5V | 2 | ||
| Emitter-base breakdown voltage (NPN Tr1) | V(BR)EBO | 7 | V | IE=100μA, IC=0 | 2 | ||
| Collector cut-off current (NPN Tr1) | ICBO | 20 | nA | VCB=32V, IE=0 | 2 | ||
| Collector cut-off current ICER (NPN Tr1) | ICER | 20 | nA | VCE=16V, R≤1kΩ | 2 | ||
| Emitter cut-off current (NPN Tr1) | IEBO | 20 | nA | VEB=6V, IC=0 | 2 | ||
| DC current gain (NPN Tr1) | hFE | 180 | 500 | VCE=2V, IC=100mA; pulse width≤300µs, duty cycle≤2% | 2 | ||
| Collector-emitter saturation voltage (NPN Tr1) | VCE(sat) | 0.375 | V | 2 | |||
| Base-emitter saturation voltage (NPN Tr1) | VBE(sat) | 1.2 | V | IC=750mA, IB=15mA; pulse width≤300µs, duty cycle≤2% | 2 | ||
| Collector-base breakdown voltage (PNP Tr2) | V(BR)CBO | -40 | V | IC=-100μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage (PNP Tr2) | V(BR)CEO | -30 | V | IC=-10mA, IB=0; pulse width≤300µs, duty cycle≤2% | 2 | ||
| Collector-emitter breakdown voltage (PNP Tr2) | V(BR)CEX | -40 | V | IC=-1μA, VBE(off)=0.5V | 2 | ||
| Emitter-base breakdown voltage (PNP Tr2) | V(BR)EBO | -7 | V | IE=-100μA, IC=0 | 2 | ||
| Collector cut-off current (PNP Tr2) | ICBO | -20 | nA | VCB=-32V, IE=0 | 2 | ||
| Collector cut-off current ICER (PNP Tr2) | ICER | -20 | nA | VCE=-16V, R≤1kΩ | 2 | ||
| Emitter cut-off current (PNP Tr2) | IEBO | -20 | nA | VEB=-6V, IC=0 | 2 | ||
| DC current gain (PNP Tr2) | hFE | 180 | 500 | VCE=-2V, IC=-100mA; pulse width≤300µs, duty cycle≤2% | 2 | ||
| Collector-emitter saturation voltage (PNP Tr2) | VCE(sat) | -0.375 | V | 2 | |||
| Base-emitter saturation voltage (PNP Tr2) | VBE(sat) | -1.2 | V | IC=-750mA, IB=-15mA; pulse width≤300µs, duty cycle≤2% | 2 |
CAD (KiCad official)
- Symbol:
CJ2045 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
cj2045-etched.step/cj2045-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj2045.step/cj2045.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
942cf8152e0fbb84, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).