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CIQ1680

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Tokmas Thyristors (SCR)/Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CIQ1680

Tokmas · Thyristors (SCR)/Modules · TO-220

CIQ1680 from Tokmas, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1, the reference terminal for both polarities of A2 in the datasheet's test conditions, and the terminal against which the 800 V VDRM/VRRM and 16 A IT(RMS) ratings apply.
2 A2 passive Main terminal 2; the datasheet specifies VDSM/VRSM of 800 V non-repetitive peak off-state voltage and dV/dt of 300 V/µs minimum at Tj = 150° C, with both polarities referenced to A1.
3 G input Gate trigger input; the datasheet gives IGT max 35 mA and VGT max 1.3 V for quadrants II-III at VD = 12 V, IGM max 4 A peak (tp = 20 µs) and PG(AV) max 1 W at Tj = 150° C.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (full sine wave), D2PAK Tc = 130° C IT(RMS) 16 A D2PAK, Tc = 130° C 2
Non repetitive surge peak on-state current ITSM 170 A F = 60 Hz, t = 16.7 ms, Tj initial = 25° C 2
Non repetitive surge peak on-state current ITSM 160 A F = 50 Hz, t = 20 ms, Tj initial = 25° C 2
I2t value for fusing I2t 100 A²s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2xIGT, tr ≤ 100 ns, F = 120 Hz, Tj = 150° C 2
Non repetitive surge peak off state voltage VDSM/VRSM 800 V Tj = 25° C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 150° C 2
Average gate power dissipation PG(AV) 1 W Tj = 150° C 2
Storage junction temperature range Tstg -40 150 ° C 2
Operating junction temperature range Tj -40 150 ° C 2
Gate trigger current IGT 35 mA VD = 12 V, RL = 33 Ω; Quadrant II - III 2
Gate trigger voltage VGT 1.3 V Quadrant II - III 2
Gate non-trigger voltage VGD 0.15 V VD = VDRM, RL = 3.3 kΩ; Quadrant II - III 2
Holding current IH 35 mA IT = 100 mA 2
Latching current IL 50 mA IG = 1.2 x IGT; Quadrant I - III 2
Latching current IL 80 mA IG = 1.2 x IGT; Quadrant II 2
Critical rate of rise of off-state voltage dV/dt 300 V/µs VD = 67% VDRM, gate open, Tj = 150° C 2
Critical rate of decrease of main current (dI/dt)c 7.1 A/ms Without snubber, Tj = 150° C 2
On-state voltage VTM 1.5 V ITM = 22.5 A, tp = 380 µs, Tj = 25° C 3
Threshold voltage VTO 0.8 V Tj = 150° C 3
On-state slope resistance RD 23 mΩ Tj = 150° C 3
Repetitive peak off-state leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25° C 3
Repetitive peak off-state leakage current IDRM/IRRM 6.4 mA VDRM = VRRM, Tj = 150° C 3
Repetitive peak off-state leakage current IDRM/IRRM 4.2 mA VD/VR = 400 V (at peak mains voltage), Tj = 150° C 3
Thermal resistance junction to case (AC) Rth (j-c) 1.2 °C/W D2PAK, junction to case (AC) 3
Thermal resistance junction to ambient Rth (j-a) 45 °C/W Junction to ambient 3

CAD (KiCad official)

  • Symbol: CIQ1680
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ciq1680-etched.step / ciq1680-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ciq1680.step / ciq1680.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (7 pp, sha256 722618374e7bdb5f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF