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CI30S65D3L2

Tokmas · SiC Diodes · TO-247-2

CI30S65D3L2 from Tokmas, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode terminal of the 650V SiC Schottky barrier rectifier diode.
2 Anode passive Anode terminal of the 650V SiC Schottky barrier rectifier diode.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-2
Category Silicon Carbide (SiC) Devices
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 650 V 1
Surge Peak Reverse Voltage VRSM 650 V 1
DC Peak Blocking Voltage VDC 650 V 1
Continuous Forward Current IF 39 A TC=25˚C 1
Continuous Forward Current IF 30 A TC=135˚C; TC=149˚C (printed alignment ambiguous) 1
Repetitive Peak Forward Surge Current IFRM 136 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 92.5 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 309 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 270 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Current IF,Max 2100 A TC=25˚C, tP=10 ms, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 1650 A TC=110˚C, tP=10 ms, Pulse 1
Power Dissipation Ptot 282.5 W TC=25˚C 1
Power Dissipation Ptot 122 W TC=110˚C 1
i2t value (Per Leg) ∫i2dt 212 A2s TC=25˚C, tP=10 ms 1
i2t value (Per Leg) ∫i2dt 162 A2s TC=110˚C, tP=10 ms 1
Operating Junction and Storage Temperature TJ, Tstg -55 175 ˚C 1
Mounting Torque (TO-220 label, M3 screw) 1 Nm M3 Screw 1
Mounting Torque (TO-220 label, 6-32 screw) 8.8 lbf-in 6-32 Screw 1
Forward Voltage VF 1.35 1.65 V IF = 20 A, TJ=25°C 2
Forward Voltage VF 1.55 1.8 V IF = 20 A, TJ=175°C 2
Reverse Current IR 8 80 μA VR = 650 V, TJ=25°C 2
Reverse Current IR 2 μA VR = 400 V, TJ=25°C 2
Reverse Current IR 30 300 μA VR = 650 V, TJ=175°C 2
Reverse Current IR 5 μA VR = 400 V, TJ=175°C 2
Thermal Resistance from Junction to Case RθJC 0.8 °C/W 2

CAD (KiCad official)

  • Symbol: CI30S65D3L2
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2 (KiCad packages3D, STEP)
  • 3D model files: ci30s65d3l2-etched.step / ci30s65d3l2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ci30s65d3l2.step / ci30s65d3l2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 635fa98cf47df9ec, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF