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CI30S120D3

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Tokmas Schottky Barrier Diodes (SBD), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CI30S120D3

Tokmas · Schottky Barrier Diodes (SBD) · TO-247-3

CI30S120D3 from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first diode leg (per-leg IF 15 A at TC=152°C, VRRM 1200 V), with its cathode common to pin 2 and the case.
2 K passive Common cathode of both diode legs, connected internally to the case/tab (VRRM 1200 V, device IF 30 A at TC=152°C).
3 A2 passive Anode of the second diode leg (per-leg IF 15 A at TC=152°C, VRRM 1200 V), with its cathode common to pin 2 and the case.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 1200 V TC=25°C 1
Surge Peak Reverse Voltage VRSM 1300 V TC=25°C 1
DC Peak Reverse Voltage VR 1200 V TC=25°C 1
Continuous Forward Current (per leg) IF 44 A TC=25°C (per leg; 88 per device) 1
Continuous Forward Current (per leg) IF 21.5 A TC=135°C (per leg; 43 per device) 1
Continuous Forward Current (per leg) IF 15 A TC=152°C (per leg; 30 per device) 1
Repetitive Peak Forward Surge Current IFRM 68 A TC=25°C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 44 A TC=110°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 100 A TC=25°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 85 A TC=110°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Current IF,Max 900 A TC=25°C, tP=10 ms, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 750 A TC=110°C, tP=10 ms, Pulse 1
Power Dissipation (per leg) Ptot 220 W TC=25°C (440 per device) 1
Power Dissipation (per leg) Ptot 95 W TC=110°C (190 per device) 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR=0-960V 1
i2t value ∫i2dt 50 A2s TC=25°C, tP=10 ms 1
i2t value ∫i2dt 36 A2s TC=110°C, tP=10 ms 1
Operating Junction Range TJ -55 175 °C 1
Storage Temperature Range Tstg -55 135 °C 1
Mounting Torque 1 Nm M3 Screw (8.8 lbf-in for 6-32 Screw) 1
Forward Voltage VF 1.5 1.6 V IF = 15 A TJ=25°C 2
Forward Voltage VF 2 V IF = 15 A TJ=175°C 2
Reverse Current IR 35 160 μA VR = 1200 V TJ=25°C 2
Reverse Current IR 120 260 μA VR = 1200 V TJ=175°C 2
Total Capacitive Charge QC 77.5 nC VR = 800 V, IF = 15A, di/dt = 200 A/μs, TJ = 25°C 2
Total Capacitance C 1200 pF VR = 0 V, TJ = 25°C, f = 1 MHz 2
Total Capacitance C 70 pF VR = 400 V, TJ = 25˚C, f = 1 MHz 2
Total Capacitance C 50 pF VR = 800 V, TJ = 25˚C, f = 1 MHz 2
Capacitance Stored Energy EC 22.1 μJ VR = 800 V 2
Thermal Resistance Junction to Case (per device) RθJC 0.34 °C/W Per Device 2
Thermal Resistance Junction to Case (per leg) RθJC 0.68 °C/W Per Leg 2

CAD (KiCad official)

  • Symbol: CI30S120D3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ci30s120d3-etched.step / ci30s120d3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ci30s120d3.step / ci30s120d3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 c2ced138ee9cc6b3, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF